大功率微波电子注器件及其发展

(100016)19981210MicrowaveElectronBeamDevicesandTheirTechnicalAdvancesLiaoFujiang(BeijingVacuumElectronicsResearchInstitute,Beijing100016)AbstractThetechnicaladvancesofmicrowaveelectronbeamdevicesaredescribedinthispaper.Basedontheinteractionbetweentheelectronbeamandelectromagneticfield,microwavetube,highpowermicrowaves(HPM)andvacuummicroelectronicsdevicesarestilltheheartsofthedefenceandinformationsystems.Theirtechnicaladvanceswillstronglysupportthedefenceequipmentdevelopmentfornextcenturyandhavedeepinfluenceonthedevelopmentofthein2formationsociety.KeywordsElectronbeam,Microwavetube,HPM,Vacuummicroelectronics,(HPM),21,,,[1],,;;,,70%,,,70,50[2]12190,1997,121993,,119991VACUUMELECTRONICS©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,(Awacs);CPI(Litton)3mm(100GHz);CPIEEV1MW,700MHzCW,;ö(MPM)2,NASALewis(SRI)10MHz50W[3]NEC,X27W[4],6,10[5]ö618GHz100W,318g[6]C170W,51%[7],,,1939RCAHaeff,(IOT),[8],Litton,,(CEA),(HDTV)[9],,20kV,3A25kW,35%,30%,,(RWG)PasotronL,S,CX[10],,,,21999©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,21,1ö,,(MPM),,,3,1993Northrop618GHz100WMPM,Litton(MMPM),1840GHz4050W[7]C170W51%MPM,3,11C170WMPM(-1dB)3.75.3GHzRF170W51%68dB53dB0%100%-11dB(DC)270V112A1918cm15.2cm2.5cm114kg3CMPM4Pierce,1kV,0151LP,0113A,4kV,M,112Aöcm2,,BeO,,43050dB,23dBMPM10dBMPM270V,91%,333kHz:,PPM,,PPM45100%(011mA),,1%,531:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,6MPM5MPM,2RF(FEAC),687XFEA,(40mA),,FEACNECFEAC,1015GHz,3GHz2715W1915dB,58mA,10Aöcm2,7FEASpindt,0184mm,143508,,0.8mm,9[11],,,41999©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,6135Lm100,130V60Hz,1215mA,100Aöcm2,40LA30LAö,[12],,,,10CCTWT11CCTWT3,,10,1122CCTWT110GHz3A35%25dB30%010930.267Pa25kW60dB20kV-70dB,Pasotron,,51:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,;,L,S,C,XPa2sotron25250kV,5013LPasotron1000A,100Ls,Pasotron20MW,25%Pasotron12LPasotron5cm,3cm,1214,50100kV,50200A,2MW,30%13PasotronMaryland,,,,14,,,14,4,,,(CEA)15,16CEAIOTCEAHDTV,,Litton,61999©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,,21,,,,,,,,;,1ParkerRK.RFAmplifiersBasedonVacuumMicroelectronicsTechnology.IEDM,1990:9679702SymonsRS.TubesStillVitalAfterAllTheseYears.IEEESpectrum,1998;04:52633GrayHF.VacuumMicroelecttonics1996:WhereWeAreandWhereWeAreGoing.IVMC,1996:134ImuraHetal.ElectronGunDesignforTWTsUsingaFieldEmitterArray(FEA)Cathode.IEDM,19975BabuR1FEDUpwithFatTubes.IEEESpec2trum,1998;04:42516BreesA.MicrowavePowerModule(MPM)DevelopmentandResults.IEDM,1993:145148(14)71:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(2)X(mV)T()X(mV)T()X(mV)T()X(mV)T()X(mV)T()X(mV)T()3.65228.7010.15577.5916.55907.6223.151277.2929.651699.3336.252231.643.75234.3810.25582.6216.65913.0323.251283.2229.751706.4536.352241.413.85240.0710.35587.6516.75918.4523.351289.1629.851713.6036.452251.243.95245.7510.45592.6716.85923.8723.451295.1230.051727.2936.552261.144.05251.4310.55597.7016.95929.3123.551301.1030.151734.2236.652271.114.15257.1010.65602.7317.05934.7523.651307.0930.251741.1836.752281.144.25262.7610.75607.7517.15940.2023.751313.1030.351748.1736.852291.244.35268.3910.85612.7817.25945.6623.851319.1230.451755.1936.952301.414.45274.0110.95617.8117.35951.1323.951325.1730.551762.2437.052311.654.55279.5911.05622.8317.45956.6124.051331.2330.651769.3237.152321.964.65285.1417.55962.1024.151337.3030.751776.42,,,-200+2000,,1OmegaCompleteTemperatureMeasurementHandbookandEncyclopedia.OmegaEngineer2ing,Stamford,CT1989:8282SandstromDR,WithrowSP.JVacSciTech2nol,1977(14):74831MCS29680981,1990(7)7WhaleyDR.Sixly2percent2efficientMiniatureC2BandVacuumPowerBoosterfortheMi2crowavePowerModule.IEEETransonPlas2maScience,1998:9129218NguyenK.Analysisofthe425MHzKlystrode.IEEETransonED,1991;(38):221222209ZavialovMA.PowerfulWidebandAmplifierBasedonhybridPlasma2cavitySlowWaveStructure.IEEETransonPlasmaScience,1994;22(10):60060710GregoryS.RecentProgressintheDevelop2mentofPlasma2filledTWTsandBackward2waveOscillators.IEEETransonPlasmaSci2ence,1998;26(3):62864511TakemuraY.ANovelVerticalCurrentLim2iterFabricatedbyDeepTrenchFormingTechnologyforHighReliableFieldEmitterArrays.IEDM,199712SpindtCA.9thIVMC,1997,,19991,,,,411999©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.