奈米电子共同实验室使用者联盟

Newsletter2002.12.10(2002/12)2002/12-2.............................................................................................3-1LithographyinITRS2001..............................................................................7-2.....................................................................................12...........................................................................................................................21................................................................23...........................................................................23........................................................................................24MRAMOUM...................................................................................24CNT-FED...............................................................................25....................................................................................................25..................................................................................................25.............................................................................................................25.............................................................................................................26.............................................................................................................262002/12-330ICICIC1991:--IC-160GHzHBTMOS-(GreendeviceSiCUMOSFET)-LED(lightemittingdiode)(MRAM)(MRAM)”0””1”CMOS(MTJ)()(MRRatio)0.18mIC(MonolithicalIntegratedSiGePhotodetectorandhigh-speedtransistor):SiGe(MQW)SiGe(HBT)(1).Si/SiGeMQW:0.8umSiGe1.31umMTJStack(2002/12)2002/12-4(2).SiGeHBTSiGeMQW:Si/SiGe/SiMQWSiGeHBTSiGeOEICs160GHzHBTandMOSopticalcomponent50%electroniccomponent50%component4IC40GbitOC768InPSiGeInPSichipSiGe40Gbit/secfT4160GHz/secfTcollectortransittimebasetransittimecollectortransittimecollectordopantbasetransittimeGeprofilebaseSiGeHBTCarbonHBTfT160GHzICsSiGe1.31mm1.55mmMOS-typeSiGeHBTOEICsSicapperGe/SilayerBaseEmitterCollectorEpibaseSiGestackedbaselayerTEMimageofSiGeHBT010m20m30m40m50m01020304050607080901001101201300154k309k463k617k772kfmaxfTfT,300/150/200fmaxfT,300/200/150fmaxfT,300/150/150fmaxJc(A/cm2)fT,fmax(GHz)Ic(A)RFperformanceofSiGeHBT2002/12-5(Greendevice:SiCUMOSFET)SiliconCarbideNovelDevicesdevelopment:(1)(CNTdevice)(CNTFET)P0.18NIC100%NSEMSEMimageofCNTFET(2):SET(singleelectrontransistor)7TUDelftSEMGCNTD(2002/12)2002/12-6SEM(3)SiGeSiGe/Si(IVSiGeCSiC)PhotodetectorLightEmittingDiode/Silicon-BasedOEICs1.3/1.55umDetector/SourceUHV/CVDGeGePL/EL/SiGe-basedPD/LEDSiGeNanoelectronicsSub.PMA/MMAPMMA/MMATiltangle~15°(dependsonTheoverlapregiondeterminesthetunnelingShadowEvaporationHigherelectronresistivePMMAIslQDsDensity~5.5×109cm-2VerticallyAlignedGe-QDs2002/12-7-1LithographyinITRS2001ERSO/ITRI/:ITRS2001Lithographyroadmap1965Intel;-(Moore’slaw)303000100-;;(CD,criticaldimension)(overlay)(defectinspection)ITRS2001(2002/12)2002/12-8:(~2007),ITRS2001Roadmap.::1.1991248nmDUV180nm193nmDUV180nmASML70nm50nmIntel193nmDUV90nm157nmDUV(2004)65nm2.2002/12-930197010contactprinters21193nmstep/scan210020%365nmI0.30-0.35ìmDUV(deepultravioletlithography)248nm(KrF)193nm(ArF)157nm(F2)0.05-0.007ìmRayleigh=k1/NANAk1()RET(resolutionenhancementtechnologies)k1OAI(offaxisillumination)PSM(phaseshiftingmask)OPC(opticalproximitycorrection)RET157nm193nm65nmRET:PSMOPCIC130nmIC2005100nm248nm150nmCD130nmRET(PSMOPC)(subwavelength)(deepsub-micron)1980R&DDUV248nm(NA~0.5)250nm193nm(NA0.8)RET65nm1997roadmap70nm49nm(isolatedline)14nm(contacthole)2001roadmap/3.4/1.3nmMEF(maskerrorfactor)1.4/3.0193nmOPCPSMESD(electrostaticdischarge)(2002/12)2002/12-10157nm(pellicle)193nm157nm193nm157nmLER(resistlineedgeroughness)2001ITRSLER193nm(ArF)CaF2193nm193nmSEM.:45nmNGL(next-generationlithography)NGL157nmNikonIBMEPL(ElectronProjectionLithography)EPLASMLEPLIntelEUV(extremeultravioletlithography)EUV13nm40EPLEUV130nm193nmDUV248nmDUV100nm157nmDUV193nmDUVNGL100nm20022003NGLDUV70nm157nmDUVNGL2005NGL157nmDUV50nm2008NGLDUV35nmNGLEUVEPLEUVEUV80EUVEPL2002/12-11EUVEPL10R&D.2010ITRS2001Roadmap:1.TheInternationalTechnologyRoadmapforSemiconductor:20012.PeterJ.Silverman,TechnologyandManufacturingGroup,IntelCorporation,IntelTech,Journal,vol6,issue02,publisedMay16,20023.RobertN.Castellano,TheInformationNetwork,NewTripoli,Pennsylvania4.M.D.Levenson,N.S.Viswanathan,R.A.Simpson,“ImprovingResolutioninLithographywithaPhase-ShiftingMask,”IEEETrans.ElectronDevices,ED-29,pp.1828-1836,1982.5.B.E.A.Saleh,S.Sayegh,“ReductionofErrorsofMicrophotographicReproductionsbyOptimalCorrectionsofOriginalMasks,”Opt.Eng.20,1981,p.781.6.J.Beach,etal.,eterminingtheCurrentLimitsof193nmLithography,roc.Interface2000,p.3.(2002/12)2002/12-12-2ERSO/ITRI/:Non-volatileMRAMFRAM(Phasechange)(Chalcogenide)(Non-volatile)(Memory)(Crystallinestate)(Amorphousstate)(Resistance)130oC1960ECDS.R.OvshinskychalcogenideSwitchingMemoryOvonicswitchAs-deposited106”0””1”CDDVDICchalcogenideVIA(O)(S)(Se)(Te)(Po)Ge-Sb-TeIn-Ag-Sb-TeGe-Sb-TeMatsushita199