A09T,AO9T场效应管三极管PL4009

SymbolVDSVGSIDMTJ,TSTGSymbolTypMax659085125RθJL4360WMaximumJunction-to-LeadCSteady-State°C/WThermalCharacteristicsParameterUnitsMaximumJunction-to-AmbientAt≤10sRθJA°C/WMaximumJunction-to-AmbientASteady-State°C/W±12Gate-SourceVoltageDrain-SourceVoltage30ContinuousDrainCurrentAMaximumUnitsParameterTA=25°CTA=70°CAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedVV4.930PulsedDrainCurrentBPowerDissipationATA=25°CJunctionandStorageTemperatureRangeAPD°C1.41-55to150TA=70°CID5.8PL4009N-ChannelEnhancementModeFieldEffectTransistorFeaturesVDS(V)=30VID=5.8A(VGS=10V)RDS(ON)28mΩ(VGS=10V)RDS(ON)33mΩ(VGS=4.5V)RDS(ON)52mΩ(VGS=2.5V)GeneralDescriptionThePL4009usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductPL4009isPb-free(meetsROHS&Sony259specifications).PL4009AisaGreenProductorderingoption.PL4009andPL4009Aareelectricallyidentical.GDSSGDTO-236(SOT-23)TopViewPuLanTechnology,Ltd.SymbolMinTypMaxUnitsBVDSS30V1TJ=55°C5IGSS100nAVGS(th)0.71.11.4VID(ON)30A22.828TJ=125°C323927.333mΩ43.352mΩgFS1015SVSD0.711VIS2.5ACiss8231030pFCoss99pFCrss77pFRg1.23.6ΩQg9.712nCQgs1.6nCQgd3.1nCtD(on)3.35nstr4.87nstD(off)26.340nstf4.16nstrr1620nsQrr8.912nCTHISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE.GateresistanceVGS=0V,VDS=0V,f=1MHzTurn-OffFallTimeMaximumBody-DiodeContinuousCurrentInputCapacitanceOutputCapacitanceTurn-OnDelayTimeDYNAMICPARAMETERSIF=5A,dI/dt=100A/µsVGS=0V,VDS=15V,f=1MHzSWITCHINGPARAMETERSTotalGateChargeVGS=4.5V,VDS=15V,ID=5.8AGateSourceChargeGateDrainChargeTurn-OnRiseTimeTurn-OffDelayTimeVGS=10V,VDS=15V,RL=2.7Ω,RGEN=3ΩmΩVGS=4.5V,ID=5AIS=1A,VGS=0VVDS=5V,ID=5ARDS(ON)StaticDrain-SourceOn-ResistanceForwardTransconductanceDiodeForwardVoltageIDSSµAGateThresholdVoltageVDS=VGSID=250µAVDS=24V,VGS=0VVDS=0V,VGS=±12VZeroGateVoltageDrainCurrentGate-BodyleakagecurrentElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)STATICPARAMETERSParameterConditionsBodyDiodeReverseRecoveryTimeBodyDiodeReverseRecoveryChargeIF=5A,dI/dt=100A/µsDrain-SourceBreakdownVoltageOnstatedraincurrentID=250µA,VGS=0VVGS=2.5V,ID=4AVGS=4.5V,VDS=5VVGS=10V,ID=5.8AReverseTransferCapacitanceA:ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.B:Repetitiverating,pulsewidthlimitedbyjunctiontemperature.C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.D.ThestaticcharacteristicsinFigures1to6,12,14areobtainedusing80µspulses,dutycycle0.5%max.E.Thesetestsareperformedwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.TheSOAcurveprovidesasinglepulserating.Rev4:June2005PuLanTechnology,Ltd.PL4009TYPICALELECTRICALANDTHERMALCHARACTERISTICS0510152025012345VDS(Volts)Fig1:On-RegionCharacteristicsID(A)VGS=2V2.5V3V4.5V10V04812162000.511.522.53VGS(Volts)Figure2:TransferCharacteristicsID(A)10203040506005101520ID(A)Figure3:On-Resistancevs.DrainCurrentandGateVoltageRDS(ON)(mΩ)1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+010.00.20.40.60.81.01.2VSD(Volts)Figure6:Body-DiodeCharacteristicsIS(A)25°C125°C0.811.21.41.61.80255075100125150175Temperature(°C)Figure4:On-Resistancevs.JunctionTemperatureNormalizedOn-ResistanceVGS=2.5VVGS=10VVGS=4.5V102030405060700246810VGS(Volts)Figure5:On-Resistancevs.Gate-SourceVoltageRDS(ON)(mΩ)25°C125°CVDS=5VVGS=2.5VVGS=4.5VVGS=10VID=5A25°C125°CPuLanTechnology,Ltd.PL4009PL4009TYPICALELECTRICALANDTHERMALCHARACTERISTICS012345024681012Qg(nC)Figure7:Gate-ChargeCharacteristicsVGS(Volts)0200400600800100012001400051015202530VDS(Volts)Figure8:CapacitanceCharacteristicsCapacitance(pF)Ciss0102030400.0010.010.11101001000PulseWidth(s)Figure10:SinglePulsePowerRatingJunction-to-Ambient(NoteE)Power(W)0.010.11100.000010.00010.0010.010.11101001000PulseWidth(s)Figure11:NormalizedMaximumTransientThermalImpedanceZθJANormalizedTransientThermalResistanceCossCrss0.11.010.0100.00.1110100VDS(Volts)ID(Amps)Figure9:MaximumForwardBiasedSafeOperatingArea(NoteE)100µs10ms1ms0.1s1s10sDCRDS(ON)limitedTJ(Max)=150°CTA=25°CVDS=15VID=5ASinglePulseD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=90°C/WTonTPDIndescendingorderD=0.5,0.3,0.1,0.05,0.02,0.01,singlepulseTJ(Max)=150°CTA=25°CPuLanTechnology,Ltd.