2N5551中文数据手册

江苏长江电子技术股份有限公司TO-92塑料封装晶体管2N5551晶体管(NPN)特性z通用开关中的应用最大额定值(Ta=25℃除非另有说明)电气特性(Ta=25℃除非另有说明)参数符号测试条件MinTypMaxUnitC-B极间击穿电压V(BR)CBOIC=100µA,IE=0180VC-E极间击穿电压V(BR)CEO*IC=1mA,IB=0160VE-B极间击穿电压V(BR)EBOIE=10µA,IC=06V集电极截止电流ICBOVCB=120V,IE=050nA发射极截止电流IEBOVEB=4V,IC=050nAhFE(1)VCE=5V,IC=1mA80hFE(2)VCE=5V,IC=10mA80300DC电流增益hFE(3)VCE=5V,IC=50mA50VCE(sat)（1）IC=10mA,IB=1mA0.15VC-E集电极-发射极饱和电压VCE(sat)（2）IC=50mA,IB=5mA0.2VVBE(sat)（1）IC=10mA,IB=1mA1VB-E基极-发射极饱和电压VBE(sat)（2）IC=50mA,IB=5mA1V集电极输出电容CobVCB=10V,IE=0,f=1MHz6pF发射器输入电容CibVBE=0.5V,IC=0,f=1MHz20pF过渡频率fTVCE=10V,IC=10mA,f=100MHz100300MHz*脉冲测试：脉冲宽度≤300μs，占空因素≤2.0％。hFE(2)分类RANKABC范围80-100100-150150-200200-300符号参数值单位VCBOC-B极间电压180VVCEOC-E极间电压160VVEBOE-B极间电压6VIC集电极电流0.6APC集电极功耗625mWRθJAThermalResistanceFromJunctionToAmbient200℃/WTj结温150℃Tstg存储温度-55~+150℃TO–921.发射极E2.基极B3.集电极CB,Jun,20120.11101101000.20.40.60.81.0110100110100110100101000255075100125150012525037550062575002468101203691215180.11101000.20.40.60.81.01101000.010.1f=1MHzIE=0/IC=0Ta=25℃CAPACITANCEC(pF)REVERSEVOLTAGEV(V)CobCibCob/Cib——VCB/VEBVBE——ICCOLLECTORCURRENTIC(mA)BASE-EMITTERVOLTAGEVBE(V)Ta=25℃Ta=100℃VCE=10VTa=25℃COLLECTORCURRENTIC(mA)TRANSITIONFREQUENCYfT(MHz)ICfT——COMMONEMITTERVCE=5V2N5551典型特征COLLECTORCURRENTIC(mA)DCCURRENTGAINhFETa=25℃Ta=100℃COMMONEMITTERVCE=5VIChFE——COLLECTORPOWERDISSIPATIONPC(mW)AMBIENTTEMPERATURETa()℃PC——TaCOMMONEMITTERTa=25℃40uA50uA70uA90uA80uA60uA30uAIB=20uACOLLECTOR-EMITTERVOLTAGEVCE(V)集电极电流IC(mA)StaticCharacteristicβ=10Ta=100℃Ta=25℃COLLECTORCURRENTIC(mA)BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)ICVBEsat——0.3200200200315050302020200500COLLECTORCURRENTIC(mA)β=10COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(V)Ta=25℃Ta=100℃VCEsat——ICB,Jun,2012