PTVSHC3D5VU--EOS浪涌防护器件

PTVSHC3D5VURev.06.11(MLVs)inportableapplicationssuchascellphones,notebookcomputers,andPDA’s.Theyfeaturelargecross-sectionalareajunctionsforconductinghightransientcurrents,offerdesirableelectricalcharacteristicsforboardlevelprotection,suchasfastresponsetime,loweroperatingvoltage,lowerclampingvoltageandnodevicedegradationwhencomparedtoMLVs.ThePTVSHC3D5VUprotectssensitivesemiconductorcomponentsfromdamageorupsetduetoelectrostaticdischarge(ESD)andothervoltageinducedtransientevents.ThePTVSHC3D5VUisavailableinaSOD-323packagewithworkingvoltagesof5volt.ItisusedtomeettheESDimmunityrequirementsofIEC61000-4-2,(±30kVair,±30kVcontactdischarge)¾1300WPeakpulsepowerperline(tP=8/20μs)¾SOD-323package¾Responsetimeistypically1ns¾ProtectoneI/Oorpowerline¾LowclampingVoltage¾RoHScompliant¾TransientprotectionfordatalinestoIEC61000-4-2(ESD)±30KV(air),±30KV(contact);IEC61000-4-4(EFT)40A(5/50ns)¾Leadfinish:100%matteSn(Tin)¾Mountingposition:Any¾Qualifiedmaxreflowtemperature:260℃¾Puretinplating:7~17um¾Pinflatness:≤3milDescriptionFeatureApplications¾Cellphonehandsetsandaccessories¾Personaldigitalassistants(PDA’s)¾Notebooks,desktops,andservers¾Portableinstrumentation¾Cordlessphones¾Digitalcameras¾Peripherals¾MP3playersMechanicalCharacteristicsRev.06.12@VRWMVBRBreakdownVoltage@ITITTestCurrentIPPMaximumReversePeakPulseCurrentVCClampingVoltage@IPPPPPPea[e-mail]oltageVRWM5VBreakdownVoltageVBRIt=1mA678VReverseLeakageCurrentIRVRWM=5V1μAClampingVoltageVCIPP=40AtP=8/20μs1518VClampingVoltageVCIPP=66AtP=8/20μs2023VJunctionCapacitanceCjVR=0Vf=1MHz480510560pFRatingSymbolValueUnitsPeakPulsePower(tP=8/20μS)Ppp1300WLeadSolderingTemperatureTL260(10sec)℃OperatingTemperatureTJ-55to+125℃StorageTemperatureTSTG-55to+150℃Electricalcharacteristicsperline@25℃(unlessotherwisespecified)Absolutemaximumrating@25℃ElectronicsParameterVVCVBRVRWMIPPITIRVFIFIRev.06.13–PeakPulseCurrent-%ofIPP1008060402001008060402000510152025300255075100125150t-Time-μs%OfRatedPowerTL–LeadTemperature-℃tP=20μs(IPP/2)tf=8μs0142842567005101525VC-ClampingVoltage(V)500400300200100001234567C-Junctioncapacitance(pF)IPP-Peakpulsecurrent(A)VR-Reversevoltage(V)110100100010100100010000PeakPulsePower(W)PulseDuration(us)Pulsewaveform:tp=8/20usf=1MHz60020Rev.06.14¾Donotusestubs,butplacethecathodeoftheTVSdiodedirectlyonthesignaltrace.¾Donotmakefalseeconomiesandsavecopperforthegroundconnection.¾PlaceviaholestogroundascloseaspossibletotheanodeoftheTVSdiode.¾Useasmanyviaholesaspossibleforthegroundconnection.¾Keepthelengthofviaholesinmind!Thelongerthemoreinductancetheywillhave.SolderReflowRecommendation030609012015018021024027030033036039042045048004080120160200240280Time(sec)PeakTemp=257℃,RampRate=0.802deg.℃/secPCBDesignRev.06.15(Pb-Free)3000/Tape&ReelDimInchesMillimetersMINMAXMINMAXA0.0630.0751.601.90B0.0450.0571.151.45C0.0900.1062.302.70D0.0310.0430.801.00E0.0100.010.250.40F0.0040.0070.090.18H0.0000.0040.000.10Productdimension(SOD-323)OrderinginformationUnit:mmABCDEFH3.000.400.50Rev.06.16://©Copyright2009,PrisemiElectronicsisaregisteredtrademarkofPrisemiElectronics.Allrightsarereserved.IMPORTANTNOTICEandareregisteredtrademarksofPrisemiElectronicsCo.,Ltd(Prisemi),Prisemireservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.Prisemimakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesPrisemiassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.“Typical”parameterswhichmaybeprovidedinPrisemidatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.Alloperatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts.Prisemidoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.Theproductslistedinthisdocumentaredesignedtobeusedwithordinaryelectronicequipmentordevices,Shouldyouintendtousetheseproductswithequipmentordeviceswhichrequireanextremelyhighlevelofreliabilityandthemalfuncti