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200012212EngineeringScienceDec12000Vol12No112[]2000-09-19;2000-10-23[](1933-),,,,(,100083)[]1000t;1000t/a[];;;;[1],,,,,1000t111150,,:510-11,1510-11(50ppt150ppt)196530t/a,19885500t/a,200026000t/a,,ppb12112SiHCl3,SiH2Cl3,,100t100t/a,4000t/a,Wacker4200t/a,Hemlock6200t/a[2],,,3m,,,,,,©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,,Ca,MgAlSiO4;Zn,AlMgSiCl2;[3]211SiCl4SiCl4,,(46m/min),2%10%,(1200),250kWh/kg,,605Topsil,,1000tSiCl4212SiH2Cl2SiH2Cl2,100cm,1000,,90kWh/kgSiHCl3:,1001,SiHCl31%;,,17%,SiHCl3;SiH2Cl2,,,,SiH4,213SiH4,,Mg2SiNH4Cl(NH3),,SiCl4UnionCarbide,1kg8142000cm(),SiCl4:SiCl43155MPa500Si2HCl3,/SiH2Cl2,SiH3Cl,SiH3ClSiH2Cl220%2215%,916%14%,,,,101,SiHCl31/10,SiH4,10%20%,38m/min800,40kWh/kg,,SiHCl3SiH4,SiH4,214SiHCl3SiHCl3[4],N2000cm,35,SiHCl3,,SiH4SiH2Cl2;,,SiHCl31103,SiH41004,810m/min5%20%,41100,SiCl4(1200),,120kWh/kgSiHCl3,,,0114MPa,575,,,575,SiHCl3,,229mmSiHCl3500kWh/kg200kWh/kg,100mm,,,,SiHCl3,SiCl41,5312:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,11SiHCl3,ETHYLSiH4SiHCl311Table1Comparisonofrankingsofsilaneandchlorosilanesmethodstoproduceelectronic2gradepolysiliconSiCl4SiHCl3SiH2Cl2SiH4333333333311041103110210/mmin-1468125838/%21052017//120011001000800/kWhkg-12501209040-30-10---3;33=/;333;33333,;,,40006000t,20/kg;311SiHCl3100t/aHCl,3000145MPaSiCl4SiH2Cl2,512%114%,119%[4](1),H2,H2(11),SiCl4SiH2Cl2SiHCl3SiHCl3SiHCl3,H2,1100:SiHCl3+H2Si+3HCl(1)2SiHCl3Si+SiCl4+2HCl(2)1Fig11Flowchartofthefirstgenerationelectronicgradepolysiliconplant(1),(2),4,H2HClSiHCl3SiCl4H2HClSiCl4SiHCl3SiCl4HCl,H2SiHCl3-40,0155MPa,-60,SiCl4632©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:H2;SiHCl3SiCl4,SiCl4,SiHCl3,SiCl4HCl,,;,312:,,,,,,SiCl4,SiH2Cl3(2):3SiCl4+Si+2H24SiHCl3(3)2Fig12Flowchartofthesecondgenerationelectronicgradepolysiliconplant(3),3145MPa500SiCl4SiH2Cl3,SiHCl3,SiCl4SiCl4,313SiCl4,HCl,H2HCl,(3),HCl,SiCl4HCl,HCl,3000145MPaSiHCl3,SiCl4SiH2Cl2SiHCl3,SiCl4,5003145MPaSiHCl3,1000tH2SiHCl3SiCl4HCl,,,,575;(1100),7312:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,1960100g/h19884kg/h,5kg/h,,,1kg100120kWh,114kg,114kg,015m3,170kWh[5],1510-11(150ppta),510-11(50ppta),110-7(100ppba)510-10(500pptw)[1]4,,SiHCl35%20%,SiH4,10,,38m/min,,,[6]SiH4,575685,SiH4H21219917%,100%,,1501500m,,;SiH4H2,,,SiH410kWh/kg,,,SiHCl3,,,SiH4,,SiH4,800,,013014m,100%,832©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.,;,n,p;55cm,5,1000t/a,SiCl4HCl[1].[J].,2000,2(6):33[2]WacherSitronicAG.Polysiliconproduction19952003,1995[3]RogersLO.Handbookofsemiconductorsilicontech2nology[M].NoyesPubl.NewJersey,1990,3393[4]Conventionalpolysiliconprocess(SiemensTechnology)report,DOE/JPL2954343221,NatTechInformCen2terSpringfield,1981,208[5]ProductspecificationofWacker2ChemieGmbH,1999,PCA2CH4;1998,PCA2AE4[6]UnionCarbideCorp.Finalreport,DOE/JPL2954334221,NatTechInformCenter,Springfield,1981TheProductionTechnologyofElectronicGradePolycrystallineSiliconLiangJunwu(InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China)[Abstract]Thetechnologyofconstructionofanelectronicgradepolycrystallinesiliconplantwithannualpro2ductionof1000tonsisexplored.Theproductqualities,safety,transportation,storage,usefuldepositionra2tios,depositionrates,onepassconversions,depositiontemperatures,electricalenergyconsumptionandman2ufacturingcostsaresummarizedforsilane,dichlorosilane,trichlorosilaneandtetrachlorosilanemethods.Thebelljar,fluidizedbedandfree2spacepolysiliconreactorsforpolysilicondepositionarecomparedwitheachother.Inaddition,theflowchartsofpolysiliconproductionaredescribed.Thetrichlorosilanemethodofthirdgenera2tionusingbelljarreactorsissuitableforaplantwithanannualproductionof1000tonsofelectronicgradepolysilicon.[Keywords]polysilicon;trichlorosilanemethod;silanemethod;flowchart;production333330107m,0107m,60250nm,01250115m,13nm0107m,9312:©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.