测试类型Types

23May2008VLSITest:Bushnell-Agrawal/Lecture21Lecture1.2VLSITestingProcessandEquipmentLecture1.2VLSITestingProcessandEquipmentƒMotivationƒTypesofTestingƒTestSpecificationsandPlanƒTestProgrammingƒTestDataAnalysisƒATEAutomaticTestEquipmentƒParametricTestingƒSummary23May2008VLSITest:Bushnell-Agrawal/Lecture22MotivationMotivationƒ(ATE)ƒInfluenceswhattestsarepossibleƒ,;ƒSOC.ƒƒ;ƒVIL,VIH,VOL,VOH,tr,tf,td,IOL,IOH,IIL,IIH23May2008VLSITest:Bushnell-Agrawal/Lecture23TypesofTestingTypesofTestingƒVerificationtesting,characterizationtesting,ordesigndebugƒ–ƒƒManufacturingtestingƒ,ƒAcceptancetesting(incominginspection)ƒ,()23May2008VLSITest:Bushnell-Agrawal/Lecture24TestingPrincipleTestingPrinciple23May2008VLSITest:Bushnell-Agrawal/Lecture25ƒ:ƒPowerful;ƒPowerful32-bit(DSP);ƒ(TestProgram);ƒ(ProbeHead)ƒ(ProbeCardorMembraneProbe)23May2008VLSITest:Bushnell-Agrawal/Lecture26VerificationTestingVerificationTestingƒƒ:ƒElectronMicroscopeƒƒElectronbeamƒ()ƒ23May2008VLSITest:Bushnell-Agrawal/Lecture27CharacterizationTestCharacterizationTestƒWorst-casetestƒ/ƒƒƒSchmooplotƒƒ,,ƒ.23May2008VLSITest:Bushnell-Agrawal/Lecture28ShmooPlotShmooPlot23May2008VLSITest:Bushnell-Agrawal/Lecture29ManufacturingTestManufacturingTestƒƒ%ƒ()ƒƒƒ23May2008VLSITest:Bushnell-Agrawal/Lecture210Burn-inorStressTestBurn-inorStressTestƒ:ƒ&,ƒCatches:ƒ––,.ƒ–23May2008VLSITest:Bushnell-Agrawal/Lecture211IncomingInspectionIncomingInspectionƒ:ƒƒƒƒƒƒ,.23May2008VLSITest:Bushnell-Agrawal/Lecture212ƒWafersortorprobetest–ƒ–,:„Gatethreshold„Polysiliconfieldthreshold„Polysheetresistance,etc.ƒPackageddevicetests23May2008VLSITest:Bushnell-Agrawal/Lecture213ƒ––,,.–.ƒ–%––.23May2008VLSITest:Bushnell-Agrawal/Lecture214ƒATE–,.ƒ–,-----(70%).23May2008VLSITest:Bushnell-Agrawal/Lecture215TestSpecifications&PlanTestSpecifications&PlanƒTestSpecifications:ƒƒ(DUTDeviceUnderTest)ƒ–.ƒ–.ƒReliability–(/).ƒƒƒƒ23May2008VLSITest:Bushnell-Agrawal/Lecture216TestProgrammingTestProgramming23May2008VLSITest:Bushnell-Agrawal/Lecture217TestDataAnalysisTestDataAnalysisƒATE:ƒDUTƒFabricationprocessƒDesignweaknessƒ100%,ƒ(FMAFailuremodeanalysis)ƒ,ƒ&Jan.25,2001VLSITest:Bushnell-Agrawal/Lecture218(ATE)AutomaticTestEquipment(ATE)AutomaticTestEquipment23May2008VLSITest:Bushnell-Agrawal/Lecture219ADVANTESTModelT6682ATEADVANTESTModelT6682ATE23May2008VLSITest:Bushnell-Agrawal/Lecture220T6682ATEBlockDiagramT6682ATEBlockDiagram23May2008VLSITest:Bushnell-Agrawal/Lecture221T6682ATESpecificationsT6682ATESpecificationsƒ0.35µmVLSIƒ1024ƒ:250,500,or1000MHzƒ:+/-200psƒDrivevoltage:-2.5to6Vƒ/Clock/strobe:+/-870psƒ:31.25psƒPatternmultiplexing:1ATE2ƒPinmultiplexing:2pins1DUT.23May2008VLSITest:Bushnell-Agrawal/Lecture222PatternGenerationPatternGenerationƒ(SQPGSequentialpatterngenerator):DUT16M,DUT.ƒ(ALPGAlgorithmicpatterngenerator):32,36ƒ–descramblerƒƒ(SCPGScanpatterngenerator)JTAG.ƒ2G8G23May2008VLSITest:Bushnell-Agrawal/Lecture223ƒResponseChecking:ƒPulsetrainmatching–1ATE16.ƒPatternmatchingmode–1ƒDUT,.ƒFrameProcessor–DUTDUT.ƒStrobetime–.23May2008VLSITest:Bushnell-Agrawal/Lecture224ProbingProbingƒPinelectronics(PE)––,DUT.ƒpogoƒPCB(waferprober)(packagehandler),().ƒliquidcoolingƒVIH,VIL,VOH,VOL,IH,IL,VTƒ(PMUParametricMeasurementUnit)23May2008VLSITest:Bushnell-Agrawal/Lecture225PinElectronicsPinElectronics23May2008VLSITest:Bushnell-Agrawal/Lecture226ƒProbecard–DUTPCB–()ƒProbeneedles–comedownandscratchthepadstostimulate/readpinsƒMembraneprobe–forunpackagedwafers–contactsprintedonflexiblemembrane,pulleddownontowaferwithcompressedairtogetwipingaction23May2008VLSITest:Bushnell-Agrawal/Lecture227T6682ATESoftwareT6682ATESoftwareƒRunsSolarisUNIXonUltraSPARC167MHzCPUfornon-realtimefunctionsƒRunsreal-timeOSonUltraSPARC200MHzCPUfortestercontrolƒPeripherals:disk,CD-ROM,micro-floppy,monitor,keyboard,HPGPIB,EthernetƒViewpointsoftwareprovidedtodebug,evaluate,&analyzeVLSIchips23May2008VLSITest:Bushnell-Agrawal/Lecture228LTXFUSIONHFATELTXFUSIONHFATE23May2008VLSITest:Bushnell-Agrawal/Lecture229SpecificationsSpecificationsƒSOC–,,–ƒ–ƒenVisionOperatingSystemƒ1or2,1024,ƒ1GHzƒ64Mvectorsƒ:DSP,,,,(RF)(4.3GHz)23May2008VLSITest:Bushnell-Agrawal/Lecture230––ƒ1ATE()ƒƒDUT1ƒATEƒ24DUTS,32or64ƒ:ATE,Jan.25,2001VLSITest:Bushnell-Agrawal/Lecture231ElectricalParametricTestingElectricalParametricTesting23May2008VLSITest:Bushnell-Agrawal/Lecture232()–&4.DC5.ACƒ//ƒJan.25,2001VLSITest:Bushnell-Agrawal/Lecture233DCParametricTestsDCParametricTests23May2008VLSITest:Bushnell-Agrawal/Lecture234.0VIfb(Ifb100250µA)Vpin.R„(R=0Ω)„„(R),IfbVpin23May2008VLSITest:Bushnell-Agrawal/Lecture235PowerConsumptionTestPowerConsumptionTest,DUTICCƒICC70mA(fails)ƒ40mAICC70mA(ok)≤23May2008VLSITest:Bushnell-Agrawal/Lecture23610VPMU(,)ƒShortcurrent40µA(ok)ƒShortcurrent40µA(fails)≤23May2008VLSITest:Bushnell-Agrawal/Lecture2370VOL,IOL1,2ƒIOL2.1mA(fails)ƒIOH-1mA(fails)23May2008VLSITest:Bushnell-Agrawal/Lecture238ThresholdTestThresholdTestI/P,0..0.1V,.,10.1V,ƒ,0input0.8V(ok)ƒ,0input0.8V(fails)ƒ,1input2.0V(ok)ƒ,1input2.0V(fails)≥≤Jan.25,2001VLSITest:Bushnell-Agrawal/Lecture239ACParametricTestsACParametr