DER-8366M-15-P014DesignExampleReportChipown页码:1/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China标题基于PN8366的5V1A充电器电源应用方案规格输入电压:90~264Vac输出功率:5W输出特性:5V/1.0A应用范围充电适配器电源产品文件编号DER-8366M-15-P014编写时间2015-8-17编写部门应用二部版本号V2.0特性概述:·单面板设计,双面元器件,尺寸:40.8mm*31mm*15mm(板上高度);·输入电压:90~264Vac;·输出功率:5W(5V1A);·待机功耗:50mW(264V)·启动时间:100ms(90V)·拥有输出短路保护,输出过流保护,输出欠压保护(PCB端3.1V以下),VDD过压保护,FB分压电阻开路短路保护,以及电流检测电阻Rcs开短路保护,过温保护;·平均效率:115V和230V输入平均效率(PCB端)满足六级能效73.6%,裕量充足DER-8366M-15-P014DesignExampleReportChipown页码:2/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China内容目录1.电源介绍………………….……………………………………………………….………………………22.电源规格明细………….…………………………………………………………………..…………..…23.电源原理图….……………………………………………………………………….……………………34.电路描述……….…………………………………………………….……………………………………45.PCBLayout……….…………………………………………………….……….…………….…………46.元件清单…………………………………………………………………………….……………………..57.变压器规格……………………………………………………………………………................………..68.电源输入输出情况和工作波形…………………………………………..………..…………………….79.电源EMS测试……………………………………………..………………………………..…..……….1710.电源EMI测试……………………………………………………..…………………………………….2011.电源温升测试………………………………………………………..………………………….……….2312.附录………………………………………………………..…………….….….………….……………..24DER-8366M-15-P014DesignExampleReportChipown页码:3/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China1.电源介绍该报告提供了一种基于PN8366设计输出5V/1A的开关电源。该报告包含了原理图,电源输入输出规格,BOM表和变压器参数以及安规和EMI测试数据等资料。以下为该电源的实物图片:2.电源规格明细项目描述标号MinTypMaxUnit备注输入Vin90230264V输出Vo4.755.05.25VIo1.11.3ACC点输出功率Pout5W待机功耗Pin50mWIo=0A纹波120mV1.5m24AWG线端输出并10uF和0.1uFDER-8366M-15-P014DesignExampleReportChipown页码:4/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China平均效率η75.6%115V,230VPCB端平均效率工作环境Tamb02545℃外部环境DER-8366M-15-P014DesignExampleReportChipown页码:5/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China3.电源原理图NLNote:具体参数以BOM为准DER-8366M-15-P014DesignExampleReportChipown页码:6/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China4.电路描述该电路图中R6,R5,R11为反馈分压电阻,通过辅助绕组检测次级的电压,使输出电压维持在5V。D1,R3以及R4,C7组成RCD箝位电路,用于吸收功率MOS(集成于PN8366内部)漏源端尖锋电压。PN8366内置高压启动功能,可以在200mS以内完全启动;当PN8366本体温度太高时,其内置的OTP保护功能会及时动作,关闭IC,以保护整个系统,温度下降之后再自动重启;电路具有输出短路保护,输出过流保护,开环保护,VDD过压保护等功能,以提高整个系统的可靠性;当反馈脚FB的分压电阻开路或短路时,系统都会进入保护状态;当CS脚短路(或Rcs短路)时系统会发生保护并进入Latch状态,以确保系统不会被损坏;C1,L2,C2组成π性滤波,以改善EMI性能;5.PCBLAYOUTPCB为普通单面板工艺,双面元器件,铜厚1OZ,基材为FR-4。PCB长40.8mm,宽31mm,厚1mm。污染等级符合CLASS2。DER-8366M-15-P014DesignExampleReportChipown页码:7/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.ChinaDER-8366M-15-P014DesignExampleReportChipown页码:8/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China6.元件清单序号元件标号元件名称元件型号封装尺寸数量备注1BD1整流桥MB6FSMDSOPA-412C1电解电容4.7uF/400V,LowESRE/C8.013C2电解电容4.7uF/400V,LowESRE/C8.014C4贴片电容4.7uF/50VSMD120615C5电解电容470uF/10V,LowESRE/C8.016C6电解电容680uF/10V,LowESRE/C8.017C7贴片电容1nF/500VSMD080518C8贴片电容1nF/50VSMD080519D1二极管D7(1N4007),0.5A1000VSOD-123110D2二极管F1M(FR107)SOD-123111D3肖特基二极管SR34DO-214AA112FR1线绕电阻10R,1W,线绕113L1BeadLQM21FN4R7M80,4.7uHSMD0805114L2色环电感1mH0510115R1贴片电阻2.7R,1%SMD0805116R2贴片电阻3.9R,1%SMD0805117R3贴片电阻300K,5%SMD1206118R4贴片电阻200R,5%SMD08051DER-8366M-15-P014DesignExampleReportChipown页码:9/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China19R5贴片电阻8.2K,1%SMD0805120R6贴片电阻39K,1%SMD0805121R7贴片电阻6.8R,5%SMD0805122R8贴片电阻33R,5%SMD0805123R9贴片电阻2.2K,5%SMD0805124R10贴片电阻4.7K,5%SMD0805125R11贴片电阻120K,5%SMD0805126T1变压器EE-13卧式加长5+2,1.85mH127U1ICPN8366,SOP-71DER-8366M-15-P014DesignExampleReportChipown页码:10/34中国无锡新区龙山路旺庄科技创业中心C幢13层13/F,BuildingC,WangzhuangTechnologyInnovationCenter,LongshanRoad,NewDestrict,Wuxi,214028,P.R.China中国苏州工业园区林泉街399号1号楼3楼3/FBuilding1,399LinquaniRoad,IndustrialPark,Suzhou,215123,P.R.China7.变压器规格7.1绕法示意图骨架EE-13L卧式加长5+253“START”67N4N2N11N3427.2绕线结构(起绕时1-5脚朝外,位于左手侧,顺时针绕)绕组起绕点结