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1AuSiPdAuSiNi2…………………………………………………………...P.3..…………………………..………………………...P.52.1…………………………………………..P.52.2n…………………..................................P.52.3(ohmiccontact)……………...................................P.6……………………………………………………...P.83.1(RTA)………………………………………………...P.83.2……………………………………………......P.93.3…………………………………………….........P.10…………………………………………………….P.11………………………………………………….P.125.1Au/Si/Pd/n-InP5.1.1……………………………………………………..P.125.1.2XRD…………………………………………………………P.135.1.3AFM…………………………………………………………P.195.1.4SEM………………………………………………………….P.235.1.5Auger………………………………………………………...P.245.2Au/Si/Ni/n-InP5.2.1……………………………………………………..P.255.2.2XRD………………………………………………………….P.265.2.3AFM………………………………………………………….P.295.2.4SEM………………………………………………………….P.315.2.5Auger………………………………………………………...P.32……………………………………………………P.333III-V[1][2]fieldeffecttransistorsFET)junctionfieldeffecttransistorsJFET)highelectronmobilitytransistorsHEMT)(heterojunctionbipolartransistorsHBT)long-wavelengthlaserdiodes)light-emittingdiodesLED)4AuGeNi[3]n1×10-6Ω-cmAuGe[4]AuGeNi52.1-1874Braun(rectifying)19041983SchottkyMott-(Schottkybarrier)(Schottkycontact)(ohmiccontact)2.2n2-1(vacuumlevelE0)EF(Fermillevel)(vacuumlevel)(Fermillevel)(workfunction)(Fermillevel)(vacuumlevel)(Fermillevel)(doping)(Fermillevel)6(conductionbandEc)(vacuumlevelE0)(conductionband)(vacuumlevel)(electronaffinityχ)2-1n2.3(ohmiccotact)-(ohmiccontact)(VLSI)---(workfunction)nsmφφp-type(workfunction)7psmφφ2-2n-type83.1(RTA)(RTA)3-1[16]3-193.2XXXθλdAB+BCAB+BC=2dsinθ(ABBC)(diffraction)2dsinθ=nλnd(d-spacing)λ10(Bragg’sLaw)Xd(h,k,l)3.311(metalorganicchemicalvapordeposition,MOCVD)2×1018cm-30.2umH3PO4:H2O2=1:1(plasmaenhancedchemicalvapordeposition,PECVD)SiO22000ÅBOE(bufferedoxideetch)SiO2(Electron-beamevaporationsystem)Au(1500Å)/Si(250Å)/Pd(500Å)/n-InP(RTA)5×5,5×10,10×10,10×15,15×15,15×20,20×2020×30um2AFMXRD125.1Au/Si/Pd/n-InP5.1.13504004505005505-13501.07×10-4Ω-cm24006.015×10-5Ω-cm2450302.55×10-6Ω-cm25004.415×10-6Ω-cm25503.4×10-5Ω-cm25-1Au/Si/Pd/n-InP135.1.2XRD5-25-35-45-55-6200350450550XRD5-2XRD5-2=30.5°2=63.6°INP(220)INP(400)AU(111)AU(220)AU(222)2=38.27°2=44.5°2=81.8°PD(111)PD(222)2=40.2°2=86.8°SI(100)SI(110)227.38°277.3°145-3200XRDAu/Si/Pd/n-InP2005-32005-2PdPd2=42.9°Pd3Si(221)Si(100)227.38°Si(110)Pd(111)277.3°2=40.2°Pd(111)155-4350XRD5-4350XRD2=30.1°PdSi(211)Pd3Si(221)Pd(111)2=40.2°Pd2=44.5°Au(200)Si(422)Au(311)2=40.2°2=77.3°165-5450XRD5-5450XRDAu9In4(332)2=43.1°175-6550XRD18XRD450Au9In4(332)InAuSiIn195.1.3AFM5-75-11Au/Si/Pd/n-InP200350450550AFM3504505-7AFM205-8200AFM5-9350215-10450AFM5-11550AFM22RMSRMSNoannealAnneal200Anneal350Anneal450Anneal5503.594E+00nm2.851E+00nm2.636E+00nm5.431E+00nm1.054E+00nmAu/Si/Pd/n-InP450307(specificcontactresistance)2.25×10-6Ω-cm2X-ray200Pd3Si450Au9In4InSiAFM450235.1.4SEM5-125-13450SEM4505-12SEM5-13450SEM245.1.5Auger5-145-15450Auger5-15SiInP4505-14Auger5-15450Auger255.2Au/Si/Ni/n-InP5.2.1(RTA)2505503505-163501.03×10-5Ω-cm2450301.98×10-6Ω-cm2500550350500RTA5-16Au/Si/Ni/n-InP265.2.2XRD5-175-185-19Au/Si/Ni/n-InP200350XRD5-17Au/Si/Ni/n-InP2=38.32=63.18InP(200)InP(400)Au(111)Au(222)2θ=38.3°2θ=81.84°Ni(111)2θ44.48°Si(110)2θ77.64°5-17XRDAu/Si/Ni/n-InPRTA2005-18XRDAu5Si2(203)InNi4(110)NiSi(020)2θ=27.64°2θ=43.78°2θ=57.5°AuSiNiSi27InP5-18200XRDRTA350XRDIn3Ni2(012)Au3In2(114)2θ=41.64°2θ=74.1°200AuSiAu5Si2AuInPAu3In2(114)NiSiInPNi(111)44.48In3Ni2(012)InNi4(110)285-19350XRDXRD350XRDRTA350AuInNiInIn3Ni2In3Ni2Au3In2InSi295.2.3AFM(RTA)Au/Si/Ni/n-typeInP5-205-21350AFM(grain)1.074nm350RTAAuSi350AuSi5.414nmAuSiNiSiNiInPAuInP5-20AFM305-21350Au/Si/NiRTA4501.98×10-6Ω-cm2XRD350In3Ni2(012)Au3In2(114)InNi4(110)SiInPAFM350315.2.4SEM5-125-13450SEM4505-22SEM5-23450325.2.5Auger5-245-254505-24Auger5-2545033[1]S.M.Sze:PhysicsofSemiconductorsDevices,(Wiley,NewYork,1981)47.[2]T.H.Windhorn,L.W.Cook,M.A.HaaseandG.E.Stillman,Appl.Phys.Lett.42(1983)725.[3]E.Kuphal,Solid-StateElectron.24(1981)69.[4]A.Katz,inA.Katz(Ed.)InPandRelatedMaterialProcessing,Technology,andDevices,ArtechHouse,Boston,1992.