CMOS模拟集成电路设计-拉扎维课件-

HarbinInstituteofTechnologyMicroelectronicsCenterCMOSCMOSMOSMOS2009-1-162HITMicroelectronicsHITMicroelectronics„„11„„22MOSMOS2009-1-163HITMicroelectronicsHITMicroelectronics11„„„„CMOSCMOS[[]]..„„CMOSCMOS[[]PhillipE.]PhillipE.Allen,DouglasR.Allen,DouglasR.HolbergHolbergPaulR.GrayPaulR.GrayPaulPaulJ.HurstJ.HurstStephenH.LewisStephenH.LewisRobertG.MeyerRobertG.Meyer2009-1-164HITMicroelectronicsHITMicroelectronics„„EggshellAnalogyofAnalogICDesign(PaulGray)„„CMOSCMOS2009-1-165HITMicroelectronicsHITMicroelectronicsSystemsCircuitsDeviceschapter3chapter4chapter5chapter6chapter7chapter8chapter9chapter10chapter11chapter12chapter2MOSchapter14PLLAD/DAChapter13simplecomplexchapter1MOS2009-1-166HITMicroelectronicsHITMicroelectronics22MOSMOS„„2.12.1„„2.1.1MOSFET2.1.1MOSFET„„G:gateG:gateS:sourceS:sourceD:drainD:drainB:bulkB:bulknnMOS2009-1-167HITMicroelectronicsHITMicroelectronics„MOSFETN„CMOSMOS2009-1-168HITMicroelectronicsHITMicroelectronics„„2.1.2MOS2.1.2MOSMOS2009-1-169HITMicroelectronicsHITMicroelectronics„„2.2MOS2.2MOSI/VI/V„„2.2.12.2.1NNFETFETbbccddMOS2009-1-1610HITMicroelectronicsHITMicroelectronics„„VVTHTHNFETNFETVVTHTHPPMSMSqqNNsubsubQQdepdepCCoxoxsisiMOS2009-1-1611HITMicroelectronicsHITMicroelectronics„„““””““(native)(native)””--0.1V.0.1V.VVTHTHNMOSNMOS0.7V0.7VMOS2009-1-1612HITMicroelectronicsHITMicroelectronics„„2.2.2MOS2.2.2MOSI/VI/VNMOSNMOS„„(V(VGSGSVVTHTH))„„VVDSDSVVGSGS--VVTHTH„„VVDSDSVVGSGS--VVTHTHMOS2009-1-1613HITMicroelectronicsHITMicroelectronicsPMOSPMOS„„„„„„IDMOS2009-1-1614HITMicroelectronicsHITMicroelectronics„„2.32.3„„2.3.12.3.1NMOSNMOSVVBBVVSSVVBBQQddVVTHTH““””0THVTHVMOS2009-1-1615HITMicroelectronicsHITMicroelectronics„„2.3.22.3.2VDSVDSLL’’VVDSDSLL’’=L=L--LLL/L=L/L=VVDSDSMOS2009-1-1616HITMicroelectronicsHITMicroelectronics„„2.3.32.3.3VGSVGS≈≈VVTHTHVVTHTH““””VGSVGSVVDSDS200mV200mV11VVTTkT/qkT/qMOS2009-1-1617HITMicroelectronicsHITMicroelectronics„„2.3.42.3.4„„GSGS„„““””DSDSMOS2009-1-1618HITMicroelectronicsHITMicroelectronics„„2.4MOS2.4MOS„„2.4.1MOS2.4.1MOS„„„„„„CC33CC44CCovov„„//C5C5C6C6Cj0VR0Bm=0.3~0.4MOS2009-1-1619HITMicroelectronicsHITMicroelectronics„„CCGDGD=C=CGSGS==CCovovWWCCGBGB„„VVDD≈≈VVSS„„CGBMOS2009-1-1620HITMicroelectronicsHITMicroelectronics„„2.4.2MOS2.4.2MOSDTHGSIVVββ2)(=−=DIλ1=MOSSPICE2009-1-1621HITMicroelectronicsHITMicroelectronics„„MOSSPICEMOSSPICE„„simulationsimulationSPICESPICE„„„„11ststMOS1MOS1MOS2MOS2MOS3MOS3„„22ndndBSIMBSIMHSPICElevelHSPICElevel2828BSIM2BSIM2„„33rdrdBSIM3BSIM3MOSmodel9MOSmodel9EKV(EKV(Enz-Krummenacher-Vittoz)„„MOSSPICEMOSSPICEBSIM3v3BSIM3v3UCBerkeleyBSIMwebsite:~bsim3„„„„HSPICEHSPICESPECTRESPECTREPSPICEPSPICEELDOELDO„„WinSPICEWinSPICESpiceOPUSSpiceOPUSFree!MOSSPICE2009-1-1622HITMicroelectronicsHITMicroelectronics„„SPICESPICERRinin,A,Avv,R,Routout(.TF)(.TF).AC.ACDCDCDCDCIIDDf(Vf(VDD,V,VGG,V,VSS,V,VBB))(.OP,.DC)(.OP,.DC)SlewRateSlewRate.TRAN.TRANMOSSPICE2009-1-1623HITMicroelectronicsHITMicroelectronics„„spicespiceMOSMOS*OutputCharacteristicsforNMOSM12100MNMOSw=5ul=1.0uVGS101.0VDS205.op.dcvds05.2Vgs130.5.plotdc-I(vds).probe*model.MODELMNMOSNMOSVTO=0.7KP=110U+LAMBDA=0.04GAMMA=0.4PHI=0.7.endMOSSPICE2009-1-1624HITMicroelectronicsHITMicroelectronics„„spicespiceDCDC*DCanalysisforAMPM12100MOSNw=5ul=1.0uM22345MOSPw=5ul=1.0uM33344MOSPw=5ul=1.0uR130100KVdd40DC5.0Vin10DC5.0.op.dcvin050.1.plotdcV(2).probe*model.MODELMOSNNMOSVTO=0.7KP=110U+LAMBDA=0.04GAMMA=0.4PHI=0.7.MODELMOSPPMOSVTO=-0.7KP=50U+LAMBDA=0.05GAMMA=0.57PHI=0.8.endMOSSPICE2009-1-1625HITMicroelectronicsHITMicroelectronics„„spicespiceACAC*ACanalysisforAMPM12100MOSNw=5ul=1.0uM22345MOSPw=5ul=1.0uM33344MOSPw=5ul=1.0uR130100KCL205pVdd40DC5.0Vin10DC1.07AC1.0.op.acDEC20100100MEG.plotacVDB(2)VP(2).probe*model.MODELMOSNNMOSVTO=0.7KP=110U+LAMBDA=0.04GAMMA=0.4PHI=0.7.MODELMOSPPMOSVTO=-0.7KP=50U+LAMBDA=0.05GAMMA=0.57PHI=0.8.endMOSSPICE2009-1-1626HITMicroelectronicsHITMicroelectronics„„spicespiceTRANTRAN*TRANanalysisforAMPM12100MOSNw=5ul=1.0uM22345MOSPw=5ul=1.0uM33344MOSPw=5ul=1.0uR130100K*CL205pVdd40DC5.0Vin10DC1.07sine(2v2v100KHz).op.tran.1u10u.plottranV(2)V(1).probe*model.MODELMOSNNMOSVTO=0.7KP=110U+LAMBDA=0.04GAMMA=0.4PHI=0.7.MODELMOSPPMOSVTO=-0.7KP=50U+LAMBDA=0.05GAMMA=0.57PHI=0.8.end2009-1-1627HITMicroelectronicsHITMicroelectronics„„designdesignverificationverification„„„„(dcvariables)„(gains,resistances)„(frequencyresponse,noise)„(slewrate)„„spicemodelspicemodelHarbinInstituteofTechnologyMicroelectronicsCenterCMOSCMOS2009-1-162HITMicroelectronicsHITMicroelectronics„„11„„22„„33„„442009-1-163HITMicroelectronicsHITMicroelectronics2009-1-164HITMicroelectronicsHITMicroelectronics11„„1.11.1„„cutoffactivetriode„„MOSMOS2009-1-165HITMicroelectronicsHITMicroelectronics„„„„2009-1-166HITMicroelectronicsHITMicroelectronics„„„„„„W/LW/LVVRDRDIIDDAAvv„„„„VVRDRD„„VVRDRDIIDDRRDD2009-1-167HITMicroelectronicsHITMicroelectronics„„1.2MOS1.2MOS„„MOSMOS„„2009-1-168HITMicroelectronicsHITMicroelectronics„„„„NMOSNMOS„„PMOSPMOS2009-1-169HITMicroelectronicsHITMicroelectronics„„„„„„10(W/L)1=50(W/L)21010(W/L)