搜索
1-1Chapter1ProgressandMainFactorsofSemiconductorTechnology•InventionofTransistorandIntegratedCircuits•FromSSItoVLSI/ULSI/SLSI•DeviceMiniaturization-----TheKeyofProgress•Micro-fabricationTechnology-----TheWaytoProgress•SianditsbasedThinFilms-----TheMaterialBaseforProgress•Moore’sLaw•SemiconductorTechnologyRoadmap•LeadingEdgeCMOSTechnology•MicroelectronicsRevolutionandInformationAge•FromMicro-toNano-1-2I.InventionofTransistorandIntegratedCircuit1947.12.23:InventionofPointcontacttransistorbyBardeen&Brattain---1stpaperonTransistor:“Thetransistor,asemiconductortriode”(Phys.Rev.74,230,1948)---ByWebster’s:“Transistor=transfer+resistor,transferringelectricalsignalacrossaresistor”1948-1952:Shockleydevelopedbasictheoryoftransistor---Junctiondiodeandtransistortheory:“Thetheoryofp/njunctioninsemiconductorsandp/njunctiontransistors”(1949.7inBellSystemTech.J.)---Fieldeffecttransistortheory:Modulationofconductanceofthinfilmsofsemiconductorbysurfacecharges”(Phys.Rev.74,232,1948)---1956NobelPrizeinPhysicstoBardeen,BrattainandShockley1950-1956:BasicTransistorfabricationtechnologydeveloped---FromGedevicetoSidevice---Fromalloyp/njunctiontodiffusionjunctionfabrication1950Diffusedjunction(Hall,Dunlap;GE)1952JFET(Shockley;BellLab)19541stSitransistor(TI)1955Diffuseddiodes&transistors(BellLab)1-31958.9.121stIC---“SolidCircuit”byJ.KilbyofTI---Flip-flopsphaseshiftoscillators---OnGesubstrate---MesastructurewithTr,R,C---Etchingbyblackwaxprotection---Wirebondinginterconnection2000NobelPrizeinPhysicstoJ.Kilby(SharedwithAfilovandKroemer)1958-1960:BasicICprocessanddevicetechnology---Oxidationprocess(Atalla;bellLab)---pnJunctionIsolation(K.Levovec)---AlmetalfilmevaporationPlanarprocesstechnology(J.Hoerni;Fairchild)1stSimonolithicIC-“Microchip”byR.Noyce(Fairchild,asoneoftheICtechnologyfounders)1959-63:MOSDevices---1959:MOScapacitor(J.Moll;Stanford)---1960-63:Sisurfacestudy&MOSdevices(Sah,Deal,Grove…)---1962:PMOS(Fairchild);NMOSFET(RCA)---1963:CMOS(Wanlass,Sah;Fairchild)1-4II.FromSSItoVLSI/ULSIRapidprogressofICastheresultsofintensiveR&Don:---Fabricationtechnology---Siandothermaterialscience---Devicephysics---Circuitandsystem---…..Successfulpursuitforhigherintegration-invariablegoalByA.ReismanByJ.MeindlSSI(SmallScaleIntegration)21-52-30MSI(MediumScaleIntegration)26-1030-103LSI(LargeScaleIntegration)211-15103-5VLSI(VeryLargeScaleIntegration)216-20105-7ULSI(UltraLargeScaleIntegration)221-25107-9SLSI(SuperLargeScaleIntegration)226109(GSI:Gigantic/GigaScaleIntegration)orSoC(SystemonChip)TremendousICprogressin:---Performances(Speed,Power,Reliability)---Functions:fromasimplelogicgatetoacomplexsystem---Productivityandcost---ApplicationexpansionChippatternsinequalarea:1-5RapidintegrationscalingupwithnewprocesstechnologiesAsignificantbigstepforwardeverydecadesinceICinvention---1958-1967SSI*Planartechnology---1968-1977LSI*Ionimplantationdoping*Poly-Sigatetechnology*DeviceisolationbyLocalOxidationofSi(LOCOS)*Self-alignedTr.byR.Bower(1969patent)*OneTr.DRAMcellbyR.Denard(1968patent)*Microprocessor(1971,Intel)---1978-1987VLSI*Finelithographtechnology(DSWstepper,e-bmask)*PlasmaandReactiveIonEtching*MagnetronSputtering---1988-1997ULSI*Sub-µanddeepSub-µCMOStechnology*DeepUVlithographandpatterning---1998-2007SoC/SLSI,Nano-meterCMOS*CuandLow-kinterconnectiontechnology*High-kgateinsulator*SOI,etcIII.Deviceminiaturization-ThekeytoprogressofMicroelectronicsEvolutionofSi-ICprocessingfeaturesYear*198019841987199019931996199920012004FeatureSize(μm)2.01.51.00.80.50.350.250.180.09DRAM64K256K1M4M16M64M256M512M1GChipsize(cm2)0.30.40.50.91.42.03.04.5Waferdiam.(mm)75100125150200200200200300Processsteps100150200300400500600700-800Utilityimpurity(ppb)100050010050510.10.01*Massproductionstartedyear1-6ICIndustry:“Makeitbiginamake-it-smallbusiness”!DRAM---anexcellentexample1M(TI)4M(TI)16M(IBM)64MHitachi)256M(Mitsubishi)1G(Hitachi-954G(NEC-97)4G(2001)Cell(μm2)21.5(2.5x8.6)8.9(2.6x3.4)4.13(1.48x2.8)1.280.72(0.6x1.2)0.290.230.1Die(mm2)50.3(4.3x11.7)100(9.8x10.2)140.9(7.8x18.1)200(20x10)304(13.2x22.8)714986645(*Thedatawerefrom1stR&Dproduct)Devicemin.Featuresize:(20-30)μm/1960→6μm/1972→0.09μm/2004Deviceminiaturizationleadsto:*Lagerscaleintegration*Higherspeed*Betterreliability*moreandsmarterfunction*Higherproductivity*Lowercost*Lowerpower*BroaderapplicationDeviceminiaturizationby“Scaling-downPrinciple”Devicegeometry-Lg,Wg,tox,xj→ⅹ1/kPowersupply-Vdd→ⅹ1/k⇒Devicespeed→ⅹkSubstratedoping-N→ⅹkChipdensity→xk2Deviceminiaturizationordownsizing—ageneraltrendofelectronicsdevice190019501960197020002010VacuumtubeTransistorICLSIVLSI/ULSISoC10cm1cm1mm10µm100nm10nm10-1m10-2m10-3m10-5m10-7m10-8m∴106Timesdevicefeaturesizereductionin100years!1-7IV.Micro-fabricationTechnology—ThewaytoICprogressAninterdisciplinaryscienceandtechnologysubject---Integrationofaseriesofvariousscienceandtechnology*Semiconductordevicephysics*Materialscience*Energybeamtechnology(e-beam,ionbeam,Laser…..)MemoryTechnologyEvolutionYearMemoryDensity(Bits)DeviceTypeCellCircuitGateMate-rialGateLength(um)GateSiO2(nm)Technology196564PM