铁电存储器工作原理和器件结构

-35-8888Vol8No8ELECTRONICS&PACKAGING64200882008-03-21582140352T2C1T1C1T2CPlanarStackedPlanarStackedPZTSBTTN405A1681-1070200808-0035-04TheWorkPrincipleandDeviceStructureofFeramMALiangChinaElectronicsTechnologyGroupCorporationNo.58ResearchInstitute,Wuxi214035,ChinaAbstract:Feramiscompetitiveinspecializedapplicationswhereitspropertieslowerwritevoltage,fasterwritespeed,andmuchgreaterwrite-eraseendurancegiveitacompellingadvantageoverflashmemory.Thisarticleintroducesferam’sworkprinciple,andtowmainstreamferroelectricmaterials.Thisarticleintroducesferam’scircuitstructure,including2T2C,1T1C,1T2Candchainferam.FeramhastwodevicestructuresPlanarstructureandstackedstructure.Stackedstructureferamneedmoreadvancedprocesstechnologyandgetshigherdensitythanplanarstructureferam.Keywords:feram;PZT;SBT1ITEEPROMFLASHSRAMStaticRandomAccessMemoryDRAMDynamicRandomAccessMemorySRAMDRAMRAMROMROMEPROMEEPROMFlashRAM-36-88ROM——RAM21PrEc+/-Pr01+/-EcEEPROMFLASHFeRAM13~5C/cm2EcCMOSPZTSBTPZTPbZrxTi1-xO3SBTSr1-yBi2+xTa2O922PZTSBTPZTMOCVDSBT1PZTSBTPZT42-22T2C1-21T2C1-11T1C32T2C-37-881341T1Clayout/DRAM2T/2C1T1C8F21T2C1T1CNAND1T1CChainFeRAMCFeRAM55ChainFeRAMCFeRAM501016MOSVCCBLMOS-38-887Planar8Stacked99FeFETPlanarLOCOSCMPStackedSTICMPCu60.5mPlanar0.5mStack7CMOS1HidemiTakasu.Ferroelectricmemoriesandtheirapplications.Currentstatusandchallengesofferroelectricmemorydevices[C].MicroelectronicEngineering,2005.2GerhardMüller,NicolasNagel,Cay-UwePinnow,etalEmergingNon-VolatileMemoryTechnologies[C].ThinSolidFilms,1995.3J.F.Scott.NewdevelopmentsonFRAMs3Dstructuresandall-perovskiteFETs[C].MaterialsScienceandEngineering,2005.1981-20036PlanarStackMOSPlanarMOSStackPlugMOSCMPStack78