现代电力电子器件

2009.0487·ᓜଜ൙ო·EXPERTSFORUM，2!፛ዔIC211958GE208090MOSFETIGBT20~303!࢟ೆ࢟ᔇ໭ୈࡼૄ৻A/D(1)2050SCR2070ModernPowerElectronicComponents450002LiXianbing,NiuZhongxia,ZhangFeng,HuangJuanInformationEngineeringUniversity(450002)IGBTIGCTAbstractThispaperreviewsthedevelopmentprocessofpowerelectronictechnologyanditscomponerltsanclintroducestheprinciplestatusquoanddynamicdevelopmelltofthemainstreampowerelectroniccomponentsAtlasttheauthorhasadiscussiononthedevelopmentofmodernpowerelectroniccomponentsKeywordspowerelectronictechnology,powerelectroniccomponents,development中图分类号：TM4文献标识码：A文章编号：1606-7517（2009）04-5-87882009.04·ᓜଜ൙ო·EXPERTSFORUM，400Hz(2)2070GTOGTRBJTMOSFETSITSITH(3)IGBTInsulatedGateBipolarTransistorMOSFETMOSFETGTR(4)PICPowerIntergratedCircuit4!࢟ೆ࢟ᔇ໭ୈࡼᔢቤखᐱ(1)IGBTIGBTNlPOWERMOSFETGTRIGBT1500V2ABBIGBT1NIGBTIGBTTrenchIGBTIGBTIGBTIGBTIGBT10kVIGBTIGBTABB8000VIGBTEupec6500V/600AIGBTIGBT2009.0489·ᓜଜ൙ო·EXPERTSFORUM，(2)MCT-MOSMOS-ControlledThyristorMCTMOS3MOSMOSMCTMOSMOSMCTIGCTIGCTIGCTGTOGTOIGBTGTOdv/dtdi/dtMCTIGCTABBACSl000ACSl000IGCT4IGCTIGCTDirectfibetopticcontro1Fastresponse(tdon3listdoff6lis)Precisetiming(tdoff400ns)PatentedfreefloatingsilicontechnologyOptimizedlowOn-stateandswitchinglossesVeryhighEMIimmunityCosmicradiationwithstandrating4ABBIGCT(4)IEGTInjectionEnhancedGateTransistor)IEGT4kVIGBTIEGTMOS6kV3MCTMCT2080MCTMCT300A3000V325A/cm212MCTMCTMCT10kWDC-DC6.1W/cm3MCT500kVHVDCSDB100mA/100VMCT9A/300VMCTMCT(3)IGCTIntergratedGateCommutatedThyristorsIGCTIGCTGTO902009.04·ᓜଜ൙ო·EXPERTSFORUM，IECT5IGBTGTOGTO1/10GTO4.5kV/1500A1997PEBBPEBBIPEMPEBBPEBBPEBB7PEBB65IECT(5)IPEMIntergratedPowerElactronicsModulesIPEMMOSFETIGBTMCT6IPEM(6)PEBBPowerElectricBuildingBlock7PEBBPEBBPEBBDC-DCPEBBPEBBPEBBPEBBPEBB5!૥᎖ቤቯݢ೯ࡼ࢟ೆ࢟ᔇ໭ୈSiCSi2009.0491·ᓜଜ൙ო·EXPERTSFORUM，300500SiCSiliconSiC5~10SiC200SiCSiC10nsFBSOASiCMESFETSMOSFETSJFETSSiCMotorolaGESiC26GHzMESFETABBSiCSiCSiCSiCSiC6!உᎫݬఠᆪማ[1]邵丙德．电力电子技术．北京：中国铁道出版社，1997．[2]赵争鸣．电子电机课程讲义．北京：清华大学，2004．11．[3]刘文华，宋强，张东江．IGCT在大功率电压源逆变器中的应用．电力电子，2004．5．[4]钱照明，吕征宇，何湘宁．电力电子器件的最新发展．中国电工技术学会电力电子学会第七次全国学术会议论文集，2000．10．[5]PowerEngineeringsocietySummerMeeting,2000.IEEE,volume;2.16~20July2000.[6]IEEEIAS2003USA.