(完整版)集成电路工艺原理期末试题

A120A41(7)Moorelaw18FablessICSOIRTAIDMChiplessIPLOCOSSTI2IC(7)ICIntel32nmLow-KHigh-K3(7)LOCOSSTISTISTILOCOSCMP4LDD(7)LDDLDDLDD5CMOS(7)CMOS6(7)1237kk(7)kkRCkDRAM8(7)(200)CMP9Si3N4Si3N4(7)Si3N4Si3N4Si3N4STICMP10(7)CMPCMP11MOS(7)MOS100Si/SiO211112CZ8(7)8CZ13(7)Si/SiO22nmSi45014(7)15MOSPN3(7)CMOSLatchupSOI16KK(7)kkkRC17CVDCVDLPCVDAPCVD(7)CVD()LPCVDAPCVD18(7)Ti/TiNAl/AlCuTiNTi/TiNAl/AlCuTiN19(7)800-10001000101NSiPN1PNPN+P+62PN4N-SiPN+P+N+1a.Pb.N+c.P+a.Pb.N+c.P+22P+P-nMOS(5)(5)P+P-nMOSp+substratep-epipwelln+n+GateDrainSource201t2oxAtoxB(t+)toxtSiO2(m)B(2/h)B/A(m/h)(h)02(0.5h)(2h)SiO21100920920A=0.50B=0.202/h1100A=0.09B=0.032/ha0.5hSiO24b2hSiO24c2abSiO2SiO2t=0abSiO2SiO2t=0(a)t2ox+AtoxB(t+)01(t2ox+Atox)/B=0ht2oxAtoxB(t1+1)t1=0.5ht2ox0.09tox0.03(0.5+0)tox0.08550.5hSiO20.0855(b)t2ox+AtoxB(t+2)0.08552(t2ox+Atox)/B=0.25ht2oxAtoxB(t2+2)t2=2ht2ox0.5tox0.2(2+0.25)tox0.46592hSiO20.4659(c)tox0.0855+0.4659=0.5514tSi0.55140.45=0.24810.24812BF3BF21+BF12+P30kV202020cm215231015/cm25(1)KE=nVBF21+30kV1=30keVBF12+30kV2=60keVBF21+BF12+30keV60keV(2)QIt/enABF21+t=QenA/I=3101520201.610-19/2010-6=9600SBF12+t=QenA/I=31015202021.610-19/2010-6=19200S31015/cm2BF21+BF12+9600S19200S36cm10cm1.44193nmk0.6NA(10)(1)NA=(n)sinm(n)/6/100.6(2)DOF=/2(NA)2=193/2*(0.6)2=268nm(3)R=k/NA=0.6*193/0.6=193nmNA0.6268nm193nm