PVD-金属化工艺

ChapterPVD1.1.11.21.31.41.522.12.22.32.43AL/SI3.1ALSI3.2AL-4AL4.1AL4.2ALCu4.355.1AL5.2TI5.3TIN5.466.16.2AL77.17.28Collimetor9ChapterRTA1.RTAPVDPVD11.11ICIC23ALSI4ARCAL5ALTIALWCDCOLLIMETORTI+TIN1.2IC12np3SISIO2456781.3ALSISIO2AL12SIALALSIALSICU1.4IC-1.4.1mnsnpsp1.4.2mnsnpspnp1.51PhysicalVaporDepositionPVD2ChemicalVaporDepositionCVDPVDEvaporationDepositionSputteringDeposition2IC1234WMOTa562.1123410eV5eV5~10eV10KeV122.22.1.2a:1DC23212a452.31Ar223mT100mT35.0E-7Torr4PVD5674~6cm2.411E08~5E10dynes/cm2Tensilestressab234IC5ALALARCALAL3AL/SIALSIALSISIALALSISIALAL111100111SIMOS100SIMOS3.1ALSIALSIALSI1%Wt%ALSISIALSIALSISISI3.2AL-TI/TIN/ALTITISITISI2TINAL/SI4ALAL4.1AL4.2ALCuALCu0.5-4%(wt%)CuALALCuCuCuALCuAl2ALALCuAl24.3ALAL500ATICrTa400C1ALALALAL5IC5.1ALAL5.2TITI500CTISI—TISI2TISISelf-AlignedsilicideALTIALN2TIN5.3TINTINALSIARCALGlue5.6SIVLSITISI2Self-AlignedSilicideSITISI21TI2TISI2RTARTP3TISI20.9uLUCENTWSI2WSI2VLSI300u.cm,1500A-2500AWSI21000A-2000A900-1100C1.5/SISISIO2SIO2WSI2SIWSI26TI/TIN/AL/TINALTI/TIN/TI/AL/TINALTIWettingLayer6.1500A-1000ATINTIWGlueLayer,5000A–10000ACVDDryEtchWTungstenEtchBackTINTIWALALWALWTINALTIN61a2TIN1SI61a6.2ALALDCALAL400CALALAL6.2.11TI/TIN2TI200-500A3DCAL4AL450-550C5TINARC6.2.2AL1TI/TIN2TI200-500A3ALDCAL0-200C4ALALALAL400C5TINARC71.0um7.1ALCALA=C/A*100%ABC71aALBALA=B/A*100%71a7.2SPUTTERETCTINGAL250CALWETTINGLAYERALTICollimatorSubstrate-biassputterdeposition8Collimator8.1COLLIMATORCOLLIMATOR0.35COLLIMATORCOHERENTPROCESSINGWAFERCOHERENTPROCESSINGCOHERENTPROCESSINGWAFERWAFERCOLLIMATORWAFERWAFERCOLLIMATORWAFER8.2COLLIMATORPVD&CVDWPLUGLINEROPTIONPOLYLINEWIDTH0.50.350.250.18STANDTISTANDTINCOHERENTTI----------COHERENTTI/TIN-----------------CVDTIN-----------PVDALBARRIEROPTIONSPOLYLINEWIDTH0.50.350.250.18STANDTI/TIN---------------COHERENTTI/TIN----------------MAYMEETTECHNOLOGYUSEINPRODUCTIONMEETTECHNOLOGYDOSENOTMEETTECHNOLOGYNEEDS8.3COLLIMATORCOLLIMATORCOLLIMATORWAFERCOLLIMATORCOLLIMATORCOLLIMATORCOLLIMATORCOLLIMATORCOLLIMATORAPTUREAPTURE99.11ALSIO242RF1RF2RF29.2ALALBakeoutBurningBurningAr9.3AL2O3ALAL2O3AL2O3123AL2O3PHPO3HPO3AL9.49.5HillockHillockHillock1H2Hillock23SIHillock4HillockTIHillockALTIHillock1AL234SI9.6O2N2H21O2AL2N23H2Hillock123Ar45RTARapidThermalAnealingRTA100RTARTA6RTARecipe6RTARecipeRTAThermalBudgetMOS7RTA7MOS900°CAST2000RTARTA88RTAProcesstube1000ppmOH-2.73m300nm99.5%Window10ppmOH-2.73mPyrometerPyrometerSensorfilter2.73m9tube,window,filter9tube,window,filterPyrometerTcpyrometerTcCalibrationfileCalibrationfilepyrometerRTARTARTARTA123RTA1Self-AlignedSilicide10TiSi210TiSi22TiN34PSG/BPSG