AMOLED-LTPS-OLED介绍

1/56일반QQ：406433680AMOLED2/56일반ⅡIntroductiontoAMOLEDⅢBasicTechnologiesⅣFutureAMOLEDsⅠIntroductionofSamsungMobileDisplayⅢMarketTrends3/56일반SMD(SDI–SECJointVenture)MobileDisplayDiv.MobileDisplayDiv.50%50%SamsungElec.&SamsungSDItosetupaJointVenture123TotalMobileDisplaySolutionProviderNo.1MobileTFT-LCDCompanyLeaderinAMOLEDMarketSTNTFTOLED4/56일반SMDCompetitivenessSECFAB+SDIModuleBestQualityOperation&ProcessDedicatedtoMobileBizCostCompetitivenessOne-StopShopping(OLED+TFT+TSP+STN)TotalSolutionProviderforMobileDisplaysBestCollaborationStructureWorld’sLargestCapacity(444M/Y)5/56일반FPDMarketVolume2010[Source:iSuppli2Q.’07]Desktop20%TV47%Mobile32%Others1%※DisplayPanelMarketVolume,Others:Industrial,PublicDisplay,etc..2006Desktop24%TV43%OthersMobile32%1%6/56일반LowCostTrendMobileDevicePrice(Ref.2.0”QVGATFTLCD,SDIMarketing’07Q2)’05’03’07$5$10$15$2016106?ModulePrice/Inch※SDIPDPMarketing(’06.3Q)TVSetPrice’07’065139’0831’0925’1050”HD$10372924201759322650”FHD$20$40$30$50$604442”HDSetPrice/Inch’097/56일반IntroductiontoAMOLEDⅠ8/56일반EvolutionofDisplayCRTBulkyVacuumInorganicLCDFlatLiquid/GasInorganicPDPOLED1stGeneration2ndGeneration3rdGenerationRigidSheetSolidOrganicFlexibleSolidOrganicFlexible4thGeneration9/56일반GlassGlassOLEDAMOLED(ActiveMatrixOrganicLightEmittingDiodes)WhatisAMOLED?TFTAMOLED=+SiliconbaseTFT(Single,a-Si,PolySi)OxideTFTOrganicTFTSmallMolecule/PolymerPhosphorescence/FluorescenceClassification10/56일반UnchangeableTrueColorComparisonofPictureQualityColorPurityLowGraysContrastColorGamutByBrightnessOutdoorReadabilityAMOLEDAMLCDNTSC100%NTSC10%NTSC80%ViewingAngle11/56일반Paper-likeThicknessBestChoiceforCurrentMarketTrend,SlimDesign11.5mm11.9mm6.9mm7.9mm13.9mmPolGlassPolGlassBacklightUnit1.07t2.6t1.47t0.52tThicknessofAMOLED0.37t12/56일반AMOLEDTFT(LTPS)Ferrari-likeSpeedFast&RobustResponsetime0.001ms(1us)10msX10,000-10℃70℃25℃(70ms~)(10ms)Winter(onskyslop)Room(~10ms)(0.01ms)(0.01ms)(0.01ms)Summer(Inacar)AMOLEDTFTLCD13/56일반(NokiaFINETECH’07,2.0”QVGADisplaywithSamePerceivedLuminance)01002003004005002007200820092010LCD+BLOLEDNormUIOLEDDarkUImWhLowPowerConsumptionPowerconsumptioncomparisonEnergyConsumption예상TypicalWebImageTypicalUIImageTypicalStillImageTypicalMoviePageTFTLCDAMOLED226mW360mWTFTLCDAMOLED226mW164mWTFTLCDAMOLED226mW164mWTFTLCDAMOLED226mW31mW14/56일반LowCostStructurebasicallylowmaterialcostCostComparison(2.0”)•Increase(Encapglass)•Increase(ComplexProcess)•Remove•Reduce(ICintegration)•Remove•Reduce(1sheet)•Increase(OLEDmaterial)GlassC/FPol.BLUD/ICEtcTotalMaterialCost:85.5%7.6%30.3%3.2%13.6%18%12.8%14.5%ProductionCostAMOLEDRef:SDI(’06.1)AMLCDGlass+EncapPol.BLUD/ICEtcC/F?ScalableProcess(Gen.5)SimpleProcessStepCostStrategy15/56일반AMOLEDDevelopmentHistory16/56일반BasicTechnologiesⅡ17/56일반AMOLEDProcessGlassloadingTFTprocessTFTProcessOLEDProcessOLEDdepositionCathodedepo.EncapsulationProcessdesiccantSeal&EncapsulationModuleProcessDriverICAttachmentFPCEvaluationProcess18/56일반TFTProcess19/56일반a-Si:HPolySiSingleSiCrystallizationTFTCarrierMobility0.5-1cm2/V-sec50-200cm2/V-sec600cm2/V-secDesignRule4-5um1-3um0.1um-0.25umVth2-4V1-2V1VPixeltypeNMOSNMOS(LCD)PMOS(OLED)NMOS(LCD)PMOS(OLED)Circuittype-CMOSCMOSApplication-LCD-OLED(?)-SolarCell(Diode)-Photosensor(Diode)-LCD-OLED-SolarCell(Diode)-Systemonpanel-LCOS(LiquidcrystalonSiliconchip)-OLEDonSi(HMD)SiliconMaterialGrain20/56일반TFTIssue-a-SiTFTMerits&DemeritsGoodSalability(Gen.8)Lowcostprocess(4-5maskstep)GooduniformityofTFTcharacteristicsLowreliabilityofTransistorSensitivetolight&temperatureNeedoutsidedriverICSource:SEC40”AMOLEDReliabilityofa-SiTFTImageBurningImageImageNitNotIsubnPhotonIG-Hotcarrier-DanglingBondgenerationSource:AUOOLED2004LTPSTFTa-SiTFTNewa-Si&gateoxideNewstructure&CircuitCancontrollessthan2%variationofVth?a-SiTFTAMOLEDW/S21/56일반GoodStabilityofTFTCircuitIntegrationPossibilityofPMOSTFTLowUniformityofTransistorHighinvestmentandProcesscostLowscalability(Gen.4)TFTIssue-ELALTPSTFTMerits&DemeritsBeamlengthlimitationSizelimitation(Max.~32”)ELAMuraRoughnessofPolySiELA:EximerLaserAnnealingCompensationCircuitELAProcessOptimizationHighcostandnotscalableprocess!!!Source:SDI31”AMOLEDELA-LTPSTFTAMOLEDW/SSource:LPL20.1”AMOLED22/56일반ProcessIssuesELACrystallizationIssues-LowVBDlowdevicereliabilitypoly-Sia-SiVcVaGBprotrusion-PanelSizelimitaionMax.:32”Max.Laserlengthlimitation(465mm)-Shortrangenon-uniformityE/D1st2nd3rd285911’DistanceResultProblems-Lowtrough-put-Highmaintenancecost-Lowstabilityoflaser-Highinvestmentcost-Highprocesscost-NarrowprocesswindowLTPSTFTKeyProcess-ELA23/56일반a-SiTFTpoly-SiTFTOxideTFTGeneration8G4G8GSemiconductorAmorphousSiPolycrystallineSiAmorphousIGZOTFTuniformityGoodPoorGoodChannelMobility1cm2/Vs~100cm2/Vs10~90cm2/VsTFTforOLED4~55~114~5PixelCircuitSimple(1T+1C)Complex(5T+2C)Simple(2T+1C)Cost/YieldLow/highHigh/lowLow/highVth(@IDS=3uA,30khr)30V0.5V~1.7VCircuitIntegrationNOYESYESPixelTFTNMOSPMOS(CMOS)NMOSTFTcharacteristicscomparisonGateSiOxGlasssubstrateGIIGZO(50nm)S/DESVDSVGS(SamsungSDI,SID2008)OxideTFT12.1”WXGAOxide