电子元件查询 FQA10N80C

©2003FairchildSemiconductorCorporationRev.A,March2003FQA10N80CQFETTMFQA10N80C800VN-ChannelMOSFETGeneralDescriptionTheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevicesarewellsuitedforhighefficiencyswitchmodepowersupplies.Features10A,800V,RDS(on)=1.1Ω@VGS=10VLowgatecharge(typical44nC)LowCrss(typical15pF)Fastswitching100%avalanchetestedImproveddv/dtcapabilityAbsoluteMaximumRatingsTC=25°CunlessotherwisenotedThermalCharacteristicsSymbolParameterFQA10N80CUnitsVDSSDrain-SourceVoltage800VIDDrainCurrent-Continuous(TC=25°C)10A-Continuous(TC=100°C)6.32AIDMDrainCurrent-Pulsed(Note1)40AVGSSGate-SourceVoltage±30VEASSinglePulsedAvalancheEnergy(Note2)920mJIARAvalancheCurrent(Note1)10AEARRepetitiveAvalancheEnergy(Note1)24mJdv/dtPeakDiodeRecoverydv/dt(Note3)4.0V/nsPDPowerDissipation(TC=25°C)240W-Derateabove25°C1.92W/°CTJ,TSTGOperatingandStorageTemperatureRange-55to+150°CTLMaximumleadtemperatureforsolderingpurposes,1/8fromcasefor5seconds300°CSymbolParameterTypMaxUnitsRθJCThermalResistance,Junction-to-Case--0.52°C/WRθCSThermalResistance,Case-to-Sink0.24--°C/WRθJAThermalResistance,Junction-to-Ambient--40°C/W●●●●●●●●●●●●▲▲▲▲!!!!!!!!!!!!◀◀◀◀●●●●●●●●●●●●▲▲▲▲!!!!!!!!!!!!◀◀◀◀SDGTO-3PFQASeriesGSDRev.A,March2003FQA10N80C©2003FairchildSemiconductorCorporationElectricalCharacteristicsTC=25°CunlessotherwisenotedNotes:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature2.L=17.3mH,IAS=10A,VDD=50V,RG=25Ω,StartingTJ=25°C3.ISD≤8.4A,di/dt≤200A/µs,VDD≤BVDSS,StartingTJ=25°C4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2%5.EssentiallyindependentofoperatingtemperatureSymbolParameterTestConditionsMinTypMaxUnitsOffCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250µA800----V∆BVDSS/∆TJBreakdownVoltageTemperatureCoefficientID=250µA,Referencedto25°C--0.98--V/°CIDSSZeroGateVoltageDrainCurrentVDS=800V,VGS=0V----10µAVDS=640V,TC=125°C----100µAIGSSFGate-BodyLeakageCurrent,ForwardVGS=30V,VDS=0V----100nAIGSSRGate-BodyLeakageCurrent,ReverseVGS=-30V,VDS=0V-----100nAOnCharacteristicsVGS(th)GateThresholdVoltageVDS=VGS,ID=250µA3.0--5.0VRDS(on)StaticDrain-SourceOn-ResistanceVGS=10V,ID=5.0A--0.931.1ΩgFSForwardTransconductanceVDS=50V,ID=5.0A--5.8--SDynamicCharacteristicsCissInputCapacitanceVDS=25V,VGS=0V,f=1.0MHz--21502800pFCossOutputCapacitance--180230pFCrssReverseTransferCapacitance--1520pFSwitchingCharacteristicstd(on)Turn-OnDelayTimeVDD=400V,ID=10.0A,RG=25Ω--50110nstrTurn-OnRiseTime--130270nstd(off)Turn-OffDelayTime--90190nstfTurn-OffFallTime--80170nsQgTotalGateChargeVDS=640V,ID=10.0A,VGS=10V--4558nCQgsGate-SourceCharge--13.5--nCQgdGate-DrainCharge--17--nCDrain-SourceDiodeCharacteristicsandMaximumRatingsISMaximumContinuousDrain-SourceDiodeForwardCurrent----10.0AISMMaximumPulsedDrain-SourceDiodeForwardCurrent----40.0AVSDDrain-SourceDiodeForwardVoltageVGS=0V,IS=10.0A----1.4VtrrReverseRecoveryTimeVGS=0V,IS=10.0A,dIF/dt=100A/µs--730--nsQrrReverseRecoveryCharge--10.9--µCRev.A,March2003FQA10N80C©2003FairchildSemiconductorCorporationTypicalCharacteristics0510152025300.51.01.52.02.5VGS=20VVGS=10V※Note:TJ=25℃RDS(ON)[Ω],Drain-SourceOn-ResistanceID,DrainCurrent[A]0.20.40.60.81.01.21.410-1100101150℃※Notes:1.VGS=0V2.250μsPulseTest25℃IDR,ReverseDrainCurrent[A]VSD,Source-Drainvoltage[V]01020304050024681012VDS=400VVDS=160VVDS=640V※Note:ID=10AVGS,Gate-SourceVoltage[V]QG,TotalGateCharge[nC]10-110010110-1100101VGSTop:15.0V10.0V8.0V7.0V6.5V6.0VBottom:5.5V※Notes:1.250μsPulseTest2.TC=25℃ID,DrainCurrent[A]VDS,Drain-SourceVoltage[V]24681010-1100101150oC25oC-55oC※Notes:1.VDS=50V2.250μsPulseTestID,DrainCurrent[A]VGS,Gate-SourceVoltage[V]Figure5.CapacitanceCharacteristicsFigure6.GateChargeCharacteristicsFigure3.On-ResistanceVariationvsDrainCurrentandGateVoltageFigure4.BodyDiodeForwardVoltageVariationwithSourceCurrentandTemperatureFigure2.TransferCharacteristicsFigure1.On-RegionCharacteristics10-11001010500100015002000250030003500Ciss=Cgs+Cgd(Cds=shorted)Coss=Cds+CgdCrss=Cgd※Notes:1.VGS=0V2.f=1MHzCrssCossCissCapacitance[pF]VDS,Drain-SourceVoltage[V]©2003FairchildSemiconductorCorporationRev.A,March2003FQA10N80C-100-500501001502000.80.91.01.11.2※Notes:1.VGS=0V2.ID=250μABVDSS,(Normalized)Drain-SourceBreakdownVoltageTJ,JunctionTemperature[oC]-100-500501001502000.00.51.01.52.02.53.0※Notes:1.VGS=10V2.ID=5.0ARDS(ON),(Normalized)Drain-SourceOn-ResistanceTJ,JunctionTemperature[oC]10-510-410-310-210-110010110-210-1100※Notes:1.ZθJC(t)=0.52℃/WMax.2.DutyFactor,D=t1/t23.TJM-TC=PDM*ZθJC(t)singlepulseD=0.50.020.20.050.10.01ZθJC(t),ThermalResponset1,SquareWavePulseDuration[sec]TypicalCharacteristics(Continued)Figure9.MaximumSafeOperatingAreaFigure10.MaximumDrainCurrentvsCaseTemperatureFigure11.TransientThermalResponseCurvet1PDMt210010110210310-210-110010110210µsDC10ms1ms100µsOperationinThisAreaisLimitedbyRDS(on)※Notes:1.TC=25oC2.TJ=150o