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20063Mar.2006271PreciousMetalsVol.27,No.12005-02-28,121.6500312.650032DevelopmentofElectronicComponentsandItsRequirementstoElectronicPastesTANFubin1TANHaowei2(1.KunmingInstituteofPreciousMetals,Kunming,Yunnan650031,China;2.KunmingCollege,Kunming,Yunnan650032,China)Abstract:Thedevelopmentofthechipceramiccapacitor,PDP(plasmadisplays),siliconsolarcellandelectronicpackagewasreviewedinthepresentpaper,andtherequirementstoelectronicpastesandthegrowingtrendofbasemetalselectronicpasteswereintroduced.Keywords:Metalmaterials;Electroniccomponents;ElectronicpastesPDP215101701652000141520055000841220055918009.925680[2][34]1201206(3.2mm1.6mm)19979200050402(1.0mm0.5mm)1.2200201(0.6mm0.3mm)200515404000.7µF100F50V5V20µm3µmAgPd1µmCuNiAgPdCuNiCuNiAgPd70[9][5~8]1Tab.119802008Developmentofchipceramiccapacitorin19802008t(µm)(mm)(mm3)(%)(mm2)(%)(µF)(V)198020403.21.61.26.141005.12100Ag-Pd0.7501985161760-----Ag-Pd232519901213702.01.21.22.88472.447Ag-Pd3515199551501.60.80.81.02171.2825Ag-Pd89151997-------CuNi--20003400-----CuNi10052002--1.00.50.50.2540.2510CuNi--2008--0.60.30.30.05410.184CuNi--209011001200AgPd870890[2]2[1011](PDP)(LCD)5076PDPLCDPDP86334PDPPDPPDPITO()PDP6627763[1213]202050002021199577.7MW2002540MW2004400MW20901MW200312MW200435MW2102[14](2)(3)(4)(5)3()0.820101032DuPontFERRO2Tab.2ThetechnicaltargetsofsiliconsolarcellinChina(mm)(cm2)(mm)*(mm)(min)(s)(mm)(%)(MW)1990Ф10010010078.51000.400.450.300.35()456014.0()12.0()1.22003103103125125106.09156.250.260.200.25()2.0200.500.7516.0()15.0()1220041501501561562252430.170.250.200.25()2.02016.0()15.0()352005210210441-------100*0.020.03mm4[15]10(1673)23(IC)I/O500150020084600I/O381635µm25.4µm20012004[16]110-4Ωcm15MPa203Tab.3ComparisonofthepropertiesbetweenPb-Snsolderandconductivepaste()(mm)(Ωcm)(W/mK)8585(MPa)Pb-Sn2300.3810.6351.510-5606515AuAgCuNiAl300UV0.0254610-432515(68)()PTCGaNGaPGaAsP1/1010020205AgPdNiCrRuO2PdO121a1b6827(2)[10](3)Tab.1TheheaterplatebasedonbasemetalsthickfilmresistanceZnNiAlSb[14](4)()(5)PDP(6)NiCr1.52.0RuO2PdO(7)Mo-Si-B1000[17](8)PTC5005000h6[1],.[M].:,2001.[2].[J].,2003,22(6):48-53.[3].[J].,1999,38(4):41-45.[4].[J].,1998,40(12):20-21.[5]Anon.NewultralowfireCOGandX7Rdielectriccompositionscanreducethemanufacturingcostassociatedwithmultilayerceramicchipcapacitors[J].Ceram.Ind.,1998,80(2):29-34.[6]WangSeaFue,DaytonGordon.DielectricpropertiesoffinegrainedBaTiO3basedX7Rmaterials[J].J.Am.Ceram.Soc.,1999,82(10):2677-2682.7427TechnicalPaperSeries960794.1996.[27]MasakuniOzawa.Roleofcerium-zirconiummixedoxidesascatalystsforcarpollution:Ashortreview[J].JournalofAlloysandCompounds,1998,275-277:886-890.[28]JRGonzlez-Velasco,MAGutirrez-Ortiz,JLMarc.Contributionofcerium/zirconiummixedoxidestotheativityofanewgenerationofTWC[J].AppliedCatalysisB:Environmental,1999,(22):167-178.[29]LoongC-K,OzawaM.Theroleofrareearthdopantsinnanophasezirconiacatalystsforautomotiveemissioncontrol[J].JournalofAlloysandCompounds,2000,303-304:60-65.[30]FrennetA,BastinJM.Catalysisandautomotivepollutioncontrol[J].ElsevierScience.BV,1995,:96.[31]PapadakisVG,PliangosCA,YentekakisIV,etal.Developmentofhighperformance,Pd-based,three-way-catalysts[J].CatalysisToday,1996,29:71-75.[32],,.[J].,1999,17(2):25-27.[33],.[M].:,2001.38-61.[34],,.,[J].,1999,20(5):527-529.[35],.[J].,2003,66:48.[36].[J].,1998,(2):3-8.[37]CowleyA.Platinum1997(interimreview)[M].London:JohnsonMatthey,1997.18.68[7],.[J].,2004,23(12):32-35.[8]PaumanokPublicationsInc.BaseMetalElectrodeMultilayeredCeramicChipCapacitors[Z].1997.[9],,.B[J].,2000,19():50-53.[10],,.[J].,2000,21(1):22-25.[11].[A].[R].:2004.[12].21[M].:2003.[13],,.[C].:2004.11.[14],,.[J].,2001,22(1):12-16.[15],.[J].,2004,23(1):35-38.[16],,.[J].,2004,23(3):29-31.[17].2003[A].[R].:2004.