S8050-SOT-23

ProductionspecificationSiliconEpitaxialPlanarTransistorS8050FEATURESzHighCollectorCurrent.(IC=500mA）zComplementaryToS8550.zExcellentHFELinearity.zHightotalpowerdissipation.(PC=300mW)APPLICATIONSzHighCollectorCurrent.SOT-23ORDERINGINFORMATIONTypeNo.MarkingPackageCodeS8050J3YSOT-23MAXIMUMRATING@Ta=25℃unlessotherwisespecifiedSymbolParameterValueUnitsVCBOCollector-BaseVoltage40VVCEOCollector-EmitterVoltage25VVEBOEmitter-BaseVoltage5VICCollectorCurrent-Continuous500mAPCCollectorDissipation300mWTj,TstgJunctionandStorageTemperature-55~150℃FormosaMs.ProductionspecificationSiliconEpitaxialPlanarTransistorS8050ELECTRICALCHARACTERISTICS@Ta=25℃unlessotherwisespecifiedParameterSymbolTestconditionsMINTYPMAXUNITCollector-basebreakdownvoltageV(BR)CBOIC=100μA,IE=040VCollector-emitterbreakdownvoltageV(BR)CEOIC=0.1mA,IB=0B25VEmitter-basebreakdownvoltageV(BR)EBOIE=100μA,IC=05VCollectorcut-offcurrentICBOVCB=40V,IE=00.1μACollectorcut-offcurrentICEOVCE=20V,IB=0B0.1μAEmittercut-offcurrentIEBOVEB=5V,IC=00.1μAVCE=1V,IC=50mA120350DCcurrentgainhFEVCE=1V,IC=500mA50Collector-emittersaturationvoltageVCE(sat)IC=500mA,IB=50mAB0.6VBase-emittersaturationvoltageVBE(sat)IC=500mA,IB=50mAB1.2VTransitionfrequencyfTVCE=6V,IC=20mAf=30MHz150MHzCLASSIFICATIONOFhFE(1)RankLHRange120-200200-350Documentnumber:BL/SSSTC079@Ta=25℃unlessotherwisespecifiedFormosaMs.ProductionspecificationSiliconEpitaxialPlanarTransistorS8050PACKAGEOUTLINEPlasticsurfacemountedpackageSOT-23SOT-23DimMinMaxA2.852.95B1.251.35C1.0TypicalD0.370.43E0.350.48G1.851.95H0.020.1J0.1TypicalK2.352.45AllDimensionsinmmSOLDERINGFOOTPRINTUnit:mmGKHJEDCBAPACKAGEINFORMATIONDevicePackageShippingS8050SOT-233000/Tape&ReelFormosaMs.