电气工程英文教材

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PracticalConsiderationsforPowerElectronicCircuitsCircuitdesignandThermalManagementareonlypartofthestoryCircuitlayoutisCRITICALtothecorrectoperationofpowerelectroniccircuitsTwoseeminglyidenticalcircuitsbuiltwithdifferentphysicallayoutswillshowdifferentwaveforms-abadlylaidoutcircuitmaynotworkatallSimilarconsiderationsholdforotherhighspeed/highfrequencycircuitsThereasonsforthisaremainlySTRAYandPARASITICINDUCTANCE–STRAYINDUCTANCE:Inductanceofconnectingwires,PCBtracksetc–PARASITICINDUCTANCE:Inductanceofcomponentsotherthaninductors(capacitorsforexample)Inveryhighfrequencyand/orhighvoltagecircuits,strayandparasiticcapacitancesarealsoaproblem-butwewillconcentrateoninductanceItisabsolutelyessentialtorememberthateveryconductorisaninductorwhendesigninghighspeedswitchingcircuitlayoutsRememberthatinductanceisapropertyofanyconductor-notjustofinductorsEffectofStray/ParasiticInductanceThoughtprovokingexample(Ihope!)WhatisthevoltagemeasuredbetweenthetwoendsofthewireV1-V2(ignoringtheeffectofresistance)?ANS:Notethatadi/dtof1000A/μsisnotfastforapowerelectroniccircuit-6000A/μsiseasilyachievableThisshowshowimportanttheinductanceofconnectionscanbe.CircuitExampleConsiderthepurposeofCSattheinputofaswitchingregulatorVSVOCSApparentCircuitMoreAccurateCircuitVS:idealsource,L1:Inductanceofrealsourceandleads,CS:Idealcapacitor,L2:inductanceofrealcapacitoranditsconnectionsAnalysisAssumeCSischargedtoVShence:LargepositivevoltagespikewhenQturnsOFFTypicalvoltageacrossQatturn-OFFdtdiLLLLVVdtdiLVVdtdidtdidtdiiiidtdiLdtdiLQSSSQCSQCSCS+−=→−==+→=+=212111121,,ReducingVoltageOvershootand“Ringing”Ifovershootandringingarenotcontrolled,thecircuitwillhavemanyproblemsOvershootwillrequireincreaseddevicevoltageratings(ormaydestroydevice)Ringingwillcreatealotofinterferencetothecontrolcircuitsandotherequipment-circuitwillnotpassregulationswhichlimitinterferencegeneratedbycircuitsEfficiencyofcircuitwillbereducedetcetc)/(2121LLLL+→NeedtomakesmallGenerallyL1cannotbemadesmall→makeL2smallHow?→UseagoodqualitycapacitorforCSandputitascloseaspossibletoQandLTheuseofacapacitorinthiswaytomitigateagainsttheeffectsofsupplyinductanceiscalledDECOUPLINGCSistermeda“DECOUPLINGCAPACITOR”DecouplingCapacitorsRemembera“real”capacitorhasresistanceandinductanceItwillhavearesonantfrequency,abovewhichitwillbehavelikeaninductor!ForalargeelectrolyticcapacitorFREScouldbeaslowas10kHz-20kHz-henceyouwilloftenseesomethinglikeLargecapacitorstoresalotofenergysoisgoodatsmoothinglowfrequencies,butithasalotofinductancesodoesnot“decouple”athighfrequencies.SmallcapacitorhaslowinductancesodecoupleshighfrequenciesbutisnoteffectiveatlowfrequenciesCombinationiseffectiveoverawidefrequencyrangeDigitalcircuits-diversionfromPowerElectronicsDigitalcircuitssuffersfromsimilarproblemsduetotheeffectsofinductanceLogicgatestakespikesofcurrentwhentheyswitchVoltagedisturbancesarecreatedinthe+Vand0VsupplyrailseachtimeagateswitchesduetotheinductanceofthesupplyconnectionsThegatemaymalfunctionifthedisturbanceonitsvoltageistoogreatThe0VrailformspartofthesignalpathbetweengatesSwitchingofonegatemayaffectthesignalseenbyanothergate-iftheoutputofthisgateisconnectedinanywaytotheinputofthefirstgate,uncontrollableoscillationscanoccurREMEDYFitdecouplingcapacitorsclosetothegates-thesegivelocalenergystorageandsupplythespikesofcurrenttothegatesThecurrentinthesupplyrailsismoresmoothandthevoltagedisturbancesarelessThisiswhyyouwillseealargenumberof100nF(typically)capacitorsonadigitalboardnexttoeachIC-rememberingthattheyMUSTBECLOSETOTHEICtobeeffectivePowerElectronicCircuitLayoutGuidelinesDeterminewhichconductorshavehighdi/dt–maketheseasshortaspossibleUseappropriatedecouplingcapacitors–makesurethesearephysicallyclosetothesourceofthehighdi/dtWhenitisdifficulttomakehighdi/dtconnectionsshort(forexampleduetocomponentsize)arrangefor“go”and“return”currentpathstobephysicallyclosesothatthemagneticfieldstendtocancel–smallmagneticfield→smallinductance–twist“go”and“return”conductorstogether(calledtwistedpair)–putoneconductorinsidetheother(co-axialcable)–usecopperstripconductorswiththininsulatorbetween(laminatedbusbar)Wherecurrentcommutatesfromonepathtoanother,makesurephysicalpathtakenbycurrentbeforeandaftercommutationisassimilaraspossible–similarpath→similarmagneticfieldpatternaroundconductorsbeforeandaftercommutation–similarmagneticfieldpattern→smallchangeinenergystorage→reducesproblemsofvoltageovershootand“ringing”–seenextpageforexampleCircuitLayoutExampleTwodimensionalrepresentationof“bad”layoutforFlybackConverter.CurrentpathonleftwhenMOSFETconductingandonrightwhendiodeconductingVSVOTwodimensionalrepresentationof“better”layoutforFlybackConverter.CurrentpathwhenMOSFETconductingadjacenttocurrentpathwhendiodeconductingVSVO

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