结构物理效应及其应用讲座第2讲量子阱_超晶格物理及其在光电子领域

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23Ì(100083),,.,,,,Thephysicsofquantumwellsandsuperlatticesandtheirapplicationsinopto2electronicsXIAJian2BaiÌ(InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China)AbstractThebasicphysicsofsemiconductorquantumwellsandsuperlatticesandtheirapplicationsinopto2elec2tronicsarereviewed.Topicscoveredincludequantumwells,quantumwires,quantumdots,lasers,modulators,self\|electro2optic2effectdevices,andquantumdotdevices.Keywordsquantumwell,superlattice,quantumdot,modulator,laser3(:G2001CB309500),(:90301007)2003-11-03,2004-04-21ÌE2mail:xiajb@red.semi.ac.cn1,,()().Arakawa[1]1986,,.Sakaki[2]1987,,,,.4:(1)10nm,;(2),.,;(3),;(4).1.1,1%,.GaAs/AlxGa1-xAs,Alx0.4,0.08%.InAs/GaSb,0.6%.II486,InAsGaSb.,In1-xGaxAs/GaSb1-yAsy,GaxAsy,..,..,,.,.1.2(MBE)(MOCVD),.,,().Stranski2Krastanov.,.(coherentislands).GaAs(001)InAs(7%)[3],:(1),.30nm,5nm;(2)10%,20%;(3);(4),,.InAs(nkT)[4],,.(106107),,(mkT).,.,InAs,GaAs36(ML),[5].GaAs36ML,.,,,.InAs.GaAs,InAs.GaAs,,InAsV[6].1.3GaAs(001)[011]V,MOCVDGaAs/AlGaAs[7].,GaAs,,,.2GaAs/AlGaAs1,p2AlGaAsn2AlGaAs,,.GaAs,.,Fabry2Perot.L,300m.1R,I0,g(),2I=I0R2exp[2(g-)L].(1)I=I0,g=+1Lln1R.(2),,.,.,AlGaAs.,.=a/2-a/2E2dz-E2dz,(3)a.58633(2004)9,,,..,g=b0J0ln(J/J0),(4)b0-,J0,.(2)(4),,Jth=J0iexp+(1/L)ln(1/R)b0J0,(5)i(9%).InPGaAs,5cm-1.(5),L.b0=0.5cm/A,J0=450A/cm2,Jth600700A/cm2.Jth,J0,(g=).2[(a)][(b)],E,,.n1,n2,n3.2,,,,.(n2)gth.2[(a)][(b)]ni(i=1,2,3)(gth,)g,,.EFc-EFvEg,(6)EFc,EFv,Eg.,GaAs,.,n(E)=m3Ü2w,(7)m3,w..,EFcEFv,.,m3cm3v,EFcEFv,..,,,,,.HH1(z),(x2y),.(7),.,.,,.,(1),AlxGa1-xAs(x=0.5x=1),(SCH),(x00.5,0.51)(GRINSCH),.,.,,,.3(VCSEL).(DBR).DBR,GaAs(n=3.5)AlAs(n=2.9),1/4.16DBR,980nm100nm.1,100nm,DBR980nm,.VCSEL,.,.,VCSEL:(1);(2)VCSEL,;(3)VCSEL,.VCSEL,.68633,,.,.,,Eex=20R,(8)R=13.6eV,0,,1=1m3e+1m3h,(9)m3e,m3n.GaAs,Eex=5meV.,aex=0aB10nm,(10)aB.,,,..,.,4,,,.,.2,.,,[8].,800Wcm-2..a2ex,nex(a2ex)-1,,,.10nm106m-1,10%.,nex(P/Ü)0.01ex(a2ex)-1,(11)GaAs,Ü=1.5eV,ex=10-8s,aex=10nm,P=765Wcm-2,800Wcm-2.(Ü),Kramers2Kronig,n(Ü)=c0(Ü)d(-),(12)..,(),,,.,.Stark.,,.49.5nm6.4104Vcm-1n[9].4,,4%.,,p2i2n[10],InGaAs/InP(i),npInP,.p2n,,.,,,.,.78633(2004)949.5nmGaAs(06.4104Vcm-1,-)4GaAs/AlGaAs(SEED)[11],5(a).p2i2ni,,1M.,Pin,.E0(4),,,,,RL,VJ=V0-ILRL,.,4,E0,,,RL,.Pin.PoutPin5(b),Pin0,SEED,Pout.PinPin,Pout,SEED.Pin,Pout,SEED.Pin,Pout,.PinPin,Pout,SEED.5(b),.,.5(a)SEED;(b)SEEDRLC.100m,20ns,50pJcm-2.SEED,,.MHz,.,,(106)SEED.5,,[1].,.S-K.5.1100meV,12.4m.35m812m,,.HgCdTe,886GaAs.,,.fij=j^pi2=2m0EijÜ2ij2,ij=j(z)zi(z)^^z,(13)i,j,^.,z().x2y,,.,,(13).[12].3InAsInGaAs,,..,6.5m,T=30K,2.5A/W.,.5.2,,CCD,.(),.,.,---.Lund2strom[13].InAs,,InAsGaAs.,GaAsInAs,,,.,10s,5ns.6[14],GaAs/In0.1Ga0.9As(),InAs,GaAs/AlAsAl0.3Ga0.7As.6(a),,InAs-,.6(b),,,,.6(c),Vpn,,.,.,T=145K,100s.6[(a),(b),(c)]5.3GaAsp2i2Schot2tky[15],i2GaAsInGaAs.Schottky,150500nm.(PC)(PL).PCPL7.,,.,,.7.98633(2004)9,PLPC,.Stark.7PLPC(PLPC),.,..:(7),,,(ps).,,.ps,,,,I=fe,f..5.4,.(1),3InGaAs[16].(SCH),,GaAs..600m900m,1kA/cm2,.,Ith=Ith0exp(T/T0),(14)T0.T0,.T0,.8900m,A,B.A:60110K,T0=477K;110200K,T0=323K;T200K,T0=81K;,T0=48K,.BA,T0.8900mPL,8PL.,PL,,.InAsGaAs,,,.1.31.7m(VCSEL)[17].VCSEL10InGaAs,960nm.,25m25m,32mA.512A/cm2.30,.,,.,,,096..[1]ArakawaY,YarivA.IEEEJ.QuantumElectro.,1986,QE\|22:1887[2]SakakiH.Jpn.J.Appl.Phys.,1987,19:L735[3]LeonardD,KrishnamurthyM,ReavesCMetal.Appl.Phys.Lett.,1993,63:3203[4]MarzinJY,GarardJM,IzraelAetal.Phys.Rev.Lett.,1994,73:716[5]XieQ,MadhukarA,ChenPetal.Phys.Rev.Lett.,1995,75:2542[6]SeifertW,CarlssonN,MillerMetal.Prog.CrystalGrowthandCharact.,1996,33:423[7]KapanE,ReinhardtF,BiasiolGetal.Appl.Surf.Sci.,1998,123/124:674[8]ChemlaDS,MillerDAB.J.Opt.Soc.Am.,1985,B2:1155[9]WeinerJS,MillerDAB,ChemlaDS.Appl.Phys.Lett.,1987,50:842[10]ZuckerJE.SPIE,1990,1283:94[11]MillerDAB,ChemlaDS,DamenTCetal.Phys.Rev.Lett.,1984,53:2173[12]ChuL,ZrennerA,BichlerMetal.Appl.Phys.Lett.,2001,79:2249[13]LunstromT,SchoenfeldW,LeeHetal.Science,1999,286:2313[14]KrunnerK,ZrennerA.SemiconductorNanocrystals.NewYork:KluwerAcademic,2003,112[15]ZrennerA,SchallerA,MarkmannMetal.Appl.Surf.Sci.,1998,123/124:356[16]ShojiH,NakataY,MukaiKetal.IEEEJ.SelectedTopicsinQuantumElectron.,1997,3:188[17]SaitoH,NishiK,OguraIetal.Appl.Phys.Lett.,1996,69:3140.,(A,B)=12(xAyB-yAxB),xAA,.A,xy50%;B,.,,.,Ax,By,AB.:,;,,.,MichiganBlinovB,Cd()()1/3x+2/3y(,),.Cd,,xy.,Cd.,Blinov:(1),1/3x+2/3y,1/3x-2/3y.(2).Blinov,.OpticalCavi2ty.,MaunzP.[Nature,2004,428:50,153Phys.World,2004(5):25]19633(2004)9

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