IGBT的PSpice仿真宏模型

11219986()JOURNALOFNINGBOUMERS1(NSEE)Vo.11JllnCN0.2I,98xGBTPspice()PsPieeIGBT,IGBT,.IGBT0PsPice,,.,PsPice,,:,,,.,,TOIGBTPSPiee.,,.:,PsPice,,l4],.,PsPice,,.,,,,.,[8,9.,,,.,PsPlce,,,(SCR)(TRIACS).,Pspice(MacroMedel).,.:19980313.2:IGBTPspice,,[l].IGBT,IGBT,IGBTPsPice.IGBTPsPiee,,.,.IGBTpsPioe,IGBT(BJT)MOSFET,1.IGBT,PNpNMOSFI{,MOSFET,2.,,IGBT,3.C.C101!4161820./VIIGBTZIGBT3IGBTE,PNPMOSFEI,.,PNP,,IGBTPNMOSFET1101.IGBTPNP,MOSFET,,,IGBT3,,cE:(l):cVTl,,cE=0;(2):K1,,c:(l)/2](l);(3):c1,=(2)(:),:IGBT,.EcGcccE;lJIGBT;FFIGBT.2IGBCM50DY12IGBT,IGBT.CM50DY121,2.,CM50DY12,IGBT,()n.(l):IGBT,1E(th),3V)(6V,2,:10V,=25,h)4.5v.(2):2.(2),El,=2:,,2:=SV,:=25A,=4.(3):IGBT,.1,:=o,==60oV,IGBT,Es=1mA,FF=Es/Es=600ko.(4)cc:cccECes,Cres,Cres,:=c.eCres,cc:=sCres,.,,lciessq,::=4880pF,=120pF,1I80pF1(=25)vvPFPFPFnsnsns=:s=600V,=00mA,=1OV=Es=20V,0=A,:Isv=0VJf=10Vf.na1MHZ,Ml300v,Ic=50A,=15V,=50Q160.555000200120250700600800mAhahaa,)CesCors3IG4,PsplceIGBT,2,.5(a)IGBT,5(b).6(a)IGBT,.,,.;,.:=V6(b).IOV604Or8121620.Vc./v4IGBT2:IGBTPSpice797VVV//,,I/-6040,.t./V(a)./V(b)5IGBTˆ,cIOVt60Io/A801002040080100111Œ086402./A(a)(6IGBT4PspiceIGBT,,,.IGBT,.,,IGBT,,,IGBT,..sPicePsPice.:,19942,..IGBTsPice.,1996(4):87~893,,.IGBTvDM0s..19%(3):94%4.HExFETsPice2.,AN-954A,IR(BIATC).19915,,.IGBT.,19%(4):61656,,.PSPICECTO..19%(4):909380()117.,.PsPice.,1997(3):85878,.PSPice.,!997(1):97~999,..,1992(4):61110.CBT.,AN-983,lR(BTC).1991APSPICESIMULATIONMACROMODELFORIGBTZhengChunlong(partmentofAutomation&ComPuterTeehnology,NingboUniversity)ABSTRACTAsimulationmodelforIGBT15establishedbyuslngPSPieemacromodelmethod.MethodsforobningModelParameterandsimulationresultsofIGBTeharacteristiesaregivenout.AeomParision15madebetweenthesimulationresultsandParactiealeharacteristicsofIGBT.KEYWORDSmodelSimulationIGBT1997,,,.,,,627600,26,,;199711485;(),,97,.1997,.,,.,,,,.,,,,,.,1997,,.,1996,,,1997.,1997,..,1998.()