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X():,WCuMoCuSiCöAl,,,,:;;;:TF125.7,TG139:A:1004244X(2001)02004906,,,()(CPUDSP),[1-6][9][13],[4]:,;(CTE)SiGaAs,;,;,,(ö),1,(Invar)(Kovar)WMoAlCu,,,11SiGaAs[4][7]CTEppmöKWö(mK)ö(gcm-3)Si4.11352.3GaAs5.8395.3Invar0.4118.1Kovar5.9178.3W4.417419.3Mo5.014010.2Cu17.74008.9Al232212.7600.31.2InvarKovar,,;MoW,InvarKovar,,,MoW,MoW,,,,Cu,CuAl,,2,24220013ORDNANCEMATERIALSCIENCEANDENGINEERINGVol.24No.2Mar.2001X:2000-06-02::,,,410083,,,,,,(MMC)2.1,CuöIn2varöCu(CIC),Cu(TexasInstrumentsCo.)CIC,F15[8]IXYSCIC(1)1CICAMAXClimaxSpecialtyMet2als[13],CuöMoöCu(CMC),[171819]CMCCIC,,Mo,CMC,CIC,,(PCB)2CMCCICCMCB2[1314]:(1);(2)Cu(hysteresis)2CuöInvaröCuCuöMoöCu[13][18]ö(gcm-3)()CTEppmöKWö(mK)xyzCIC20ö60ö208.4HB901205.216024CMC20ö60ö209.7HV3006.8244197(PLANSEE)POLESEWCuMoCu,[9]WCuMoCuWMoCu,Ni,3WCuMoCu3WCuMoCuö(gcm-3)CTEppmöKWö(mK)W90Cu1017.05.66.5140170W85Cu1516.46.37.0160190W80Cu2015.67.69.1180210Mo85Cu1510.06.57.1150170Mo80Cu209.97.28.0160190Mo70Cu309.77.68.5170200:,(heatsink),ANöSPY,WCu2W15Cu[2]2WCuPLANSEEWCu[10],WCu,,W15Cu176Wö(mK)POLESEFSSS0.5Lm,Co,W15Cu,98%,137Wö(mK)PLANSEE,Mo30Cu70Lm,[10]2.2,0524(),,SiCöAl(MicrowaveCarrier)(MCMheatsinks)(PCBheatsinks)(ACMC)AlSiC,,SiCöAlSiC[12]DWA50vol%55vol%SiCö6061[11],2.99göcm3,220Wö(mK)(Alcoa)55%60%SiCAl2O3,(Kovar)(Invar)LanxideSiCAl2O3,[131516]SiöAl,,CTESiöAl[5]2.3POLESEAgöInvar(SilvarTM),,,Ag44SilvarCTEppmöKWö(mK)ö(gcm-3)HRB%IACSAgöInvar39ö616.51538.776035BeOBe,[45],60vol%BeOCTE6.1ppmöK,240Wö(mK),2.55göcm,BeOBe3,ö;3.1R.M.German(PIM),99%W15Cu,220Wö(mK),,[2023]In-HyungMoonWCu,,12001h,96%WCu[22]FrankJ.PoleseWCuMoCu[21]WMoCu(subnodules),CuWMo,,11003h,98%WCu3.2,:(1),CBAlNCuAlMo,,[45132630]BöAlPITCH120Cu2,(PITCH-1202000),CuAl,,AlNCuAlMoMo,CICCMC,[4](2)CuAl,,,SiGaAs,CuZrW2O8ZrV2O7ZrVPO7HfV2O7HfVPO7NiTiCuZnAl[2829]CuAl,,152:3.3,,3()NorthropGrumman[25]Cu(Cu,Cu,CuBeO,CuöMoöCu)SiC,Al,SiCöAl,,,CuWöCuCuMoöCu[24]4,1WöCu,2CuCu,121Si6(CTE4.2ppmöK),2(CTE17ppmöK)5(CTE1317ppmöK),,4CuWöCu4,,MMC,,,,,,,,WCuMoCuCICCMC,,WCuMoCuCICAlöSiCAlöAlNAlöSi,WCuMoCu,,,CföSiCAl,,[8][27],CIC,,Cu5,,,,,:1,,.-DG.,1997,31(3):8890.2,,.WCu.,1999,9(2):324326.3,,..,1997,11(3):5256.4CarlZweben.Metal-Matrixcompositesforelectronicpackaging.JOM,1992,44(7):1523.5CarlZweben.Advancesincompositematerialsforthermalmanagementinelectronicpackaging.JOM,1998,50(6):4751.6RandallMGermanetc.Powdermetallurgyprocessingofthermalmanagementmaterialsformicroelectronicappli2cations.TheInternationalJournalofPowderMetallur2gy.1994,30(2):205215.25247,.().:,1987.8,,,,1993,14(6):26.9,,.-.,1999,1:3941.10KnyE.Propertiesandapplicationofbinarypseudoal2loyofCuandrefractorymetals.Proceedingsofthe12thinternationalplanseeseminar.PlanseeAG,Reutte,May1989.11HuntM.Progressinpowdermetalcomposites.MaterialsEngineering,1990,107(1):3336.12HuntM.Aluminumcompositescomeofage.MaterialsEngineering,1991,106(1):3740.13HuntM.Electronicpackaging.MaterialsEngineering.1991,108(1):2425.14JohnA.Shieldsandpetelipetzky.MolybdenumApplicationintheElectronicsMarket.JOM,2000,52(3):3739.15AghajanianMKetc.Thefabricationofmetalmatrixcompositesbyapressurelessinfiltrationtechnique.JournalofMaterialsScience,1991,26(2):447454.16UrquhartAW.MoltenMetalsSireMMCs,CMCs.AdvancedMaterials&Processes.1991,140(7):2529.17RichardD.Nicholson,RonaldSFusco.Compositesheetmadeofmolybdenumanddispersionstrengthenedcop2per.USpatent4988392,Jan29,1991.18RonaldSFusco.Compositecoppermolybdenumsheet.USpatent4950554,Aug21,1990.19RichardDNicholson,RonaldSFusco.Compositesheetmadeofmolybdenumanddispersionstrengthenedcop2per.USpatent4957823,Sep18,1990.20RandallMGerman.Novelpowdermetallurgytechniquesforrefractorymetalsandhardmaterials.Proceed2ingsofthe14thinternationalplanseeseminar.PlanseeAG,Reutte,1997,(1),194206.21FrankJPolese.Heatdissipatingsubstrateformicroelectronicdevicesandfabricationmethod.USPatent5878332,Mar2,1999.22InHyungMoonetc.SinteringbehaviorofmechanicalalloyedWCucompositepowder.Proceedingsofthe14thInternationalPlanseeSeminar,PlanseeAG,Reutte,1997,(1),1626.23BinYang,RandallMGerman.PowderinjectionmoldingandinfiltrationsinteringofsuperfinegrainWCu.TheInternationalJournalofPowderMetallurgy.1997,33(4):5563.24KenichiroKohmoto,MitsuoOsada.Semiconductorelement-mountingcompositeheatsinkbase.USPatent5481136,Jan2,1996.25GungerMNetc.Compositesubstratecarrierforhighpowerelectronicdevices.USPatent5944097,Aug31,1999.26,,.(ö)..1998,12(3):5659.27,.,1997,18(6):213217.28,.A4+M25+O7.,1998,12(3):4042.29VerdonC,DunandDC.HightemperaturereactivityintheZrW2O8Cusystem.ScriptaMaterialia,1997,36(9):10751080.30ZwebenC,SchmitKA.Packaging,Vol.1ofelectronicmaterialshandbook.MaterialsPark,OH:ASM,1989.ADVANCESINMETAL-MATRIXMATERIALFORELECTRONICPACKAGINGLiuZhengchun,WangZhifa,JiangGuoshengABSTRACTComparedwithseveraltraditionalmetal-matrixelectronicpackagingmaterials,thecharacteristics,fabricatingtechnology,applicationprospectandexistingproblemsofthenewpackagingmaterialssuchasWCu,MoCuandSiCöAlectareelaboratedindetail.Therecentdevelopmentsofthemetal-matrixelectronicpackagingmaterialarepresented.ItispointedoutthattherecentR&Dabroadoftheelectronicpackaging