MIL-PRF-19500 301K-2010 Semiconductor Device Tran

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MIL-PRF-19500/301K24May2010SUPERSEDINGMIL-PRF-19500/301J12October2007PERFORMANCESPECIFICATIONSHEET*SEMICONDUCTORDEVICE,TRANSISTOR,NPNSILICON,LOW-POWER,TYPE2N918AND2N918UB,JAN,JANTX,JANTXV,ANDJANS,JANHC,JANKC,ANDJANHCBThisspecificationisapprovedforusebyallDepartmentsandAgenciesoftheDepartmentofDefense.TherequirementsforacquiringtheproductdescribedhereinshallconsistofthisspecificationsheetandMIL-PRF-19500.1.SCOPE1.1Scope.ThisspecificationcoversthedetailrequirementsforNPN,silicon,ultra-highfrequencytransistors.FourlevelsofproductassuranceareprovidedforeachdevicetypeasspecifiedinMIL-PRF-19500andtwolevelsofproductassuranceareprovidedforunencapsulateddevices.*1.2Physicaldimensions.Seefigure1(TO-72),figure2forUB,figure3(JANHCandJANKC),andfigure4(JANHB).1.3Maximumratings.TA=+25°C,unlessotherwisespecified.TypesPT(1)TA=+25°CRθJCVCBOVCEOVEBOICTSTGandTJmW°C/WVdcVdcVdcmAdc°C2N9182N918UB200200(2)(2)303015153.03.05050-65to+200(1)Deratelinearly,1.14mW/°CaboveTA=+25°C.(2)ContactmanufacturerforRθJCestimates.1.4PrimaryelectricalcharacteristicsatTA=+25°C.Limit|hFE|VCE=10VdcIC=4mAdcf=100MHzrb'CcVCB=10VdcIE=-4.0mAdcf=79.8MHzCobo2VCB=10VdcIE=0mAdc100kHz≤f≤1MHzNFVCE=6VdcIC=1mAdcf=60MHzgs=2.5mmhoGpeVCB=12VdcIC=6.0mAdcf=200MHzpspFDBdBMinimum6.015Maximum18.0251.76.0AMSCN/AFSC5961INCH-POUND*Comments,suggestions,orquestionsonthisdocumentshouldbeaddressedtoDefenseSupplyCenter,Columbus,ATTN:DSCC-VAC,P.O.Box3990,Columbus,OH43218-3990,oremailedtoSemiconductor@dscc.dla.mil.Sincecontactinformationcanchange,youmaywanttoverifythecurrencyofthisaddressinformationusingtheASSISTOnlinedatabaseat=+25°C.-Continued.LimithFE1VCE=10VdcIC=500µAdchFE2VCE=1.0VdcIC=3.0mAdchFE3VCB=10VdcIC=10mAdcMinimum102020Maximum2002.APPLICABLEDOCUMENTS2.1General.Thedocumentslistedinthissectionarespecifiedinsections3,4,or5ofthisspecification.Thissectiondoesnotincludedocumentscitedinothersectionsofthisspecificationorrecommendedforadditionalinformationorasexamples.Whileeveryefforthasbeenmadetoensurethecompletenessofthislist,documentusersarecautionedthattheymustmeetallspecifiedrequirementsofdocumentscitedinsections3,4,or5ofthisspecification,whetherornottheyarelisted.2.2Governmentdocuments.2.2.1Specifications,standards,andhandbooks.Thefollowingspecifications,standards,andhandbooksformapartofthisdocumenttotheextentspecifiedherein.Unlessotherwisespecified,theissuesofthesedocumentsarethosecitedinthesolicitationorcontract.DEPARTMENTOFDEFENSESPECIFICATIONSMIL-PRF-19500-SemiconductorDevices,GeneralSpecificationfor.DEPARTMENTOFDEFENSESTANDARDSMIL-STD-750-TestMethodsforSemiconductorDevices.*(Copiesofthesedocumentsareavailableonlineat://assist.daps.dla.milorfromtheStandardizationDocumentOrderDesk,700RobbinsAvenue,Building4D,Philadelphia,PA19111-5094.)*2.3OrderofprecedenceUnlessotherwisenotedhereinorinthecontract,intheeventofaconflictbetweenthetextofthisdocumentandthereferencescitedherein,thetextofthisdocumenttakesprecedence.Nothinginthisdocument,however,supersedesapplicablelawsandregulationsunlessaspecificexemptionhasbeenobtained.3.REQUIREMENTS3.1General.TheindividualitemrequirementsshallbeasspecifiedinMIL-PRF-19500andasmodifiedherein.3.2Qualification.Devicesfurnishedunderthisspecificationshallbeproductsthataremanufacturedbyamanufacturerauthorizedbythequalifyingactivityforlistingontheapplicablequalifiedmanufacturer'slist(QML)beforecontractaward(see4.2and6.3).3.3Abbreviations,symbols,anddefinitions.Abbreviations,symbols,anddefinitionsusedhereinshallbeasspecifiedinMIL-PRF-19500andasfollows.gs............Noisesourceconductance.Po...........Oscillator,poweroutput.RBEExternalresistance,basetoemitter.SymbolDimensionsNotesInchesMillimetersMinMaxMinMaxCD.178.1954.524.955CH.170.2104.325.33HD.209.2305.315.845LC.100TP2.54TP7,8LD.016.021.406.5337,8LL.500.75012.7019.057,8LU.016.019.406.483L1.0501.27L2.2506.35P.1002.54Q.0401.025TL.028.048.711.22TW.036.046.911.17r.007.18α45°TPNOTES:1.Dimensionareininches.2.Millimetersaregivenforgeneralinformationonly.3.Beyondr(radius)maximum,THshallbeheldforaminimumlengthof.011inch(0.28mm).4.DimensionTLmeasuredfrommaximumHD.5.BodycontouroptionalwithinzonedefinedbyHD,CD,andQ.6.Leadsatgaugeplane.054+.001-.000inch(1.37+0.025-0.00mm)belowseatingplaneshallbewithin.007inch(0.18mm)radiusoftrueposition(TP)atmaximummaterialcondition(MMC)relativetotabatMMC.7.DimensionLUappliesbetweenL1andL2.DimensionLDappliesbetweenL2andLLminimum.DiameterisuncontrolledinL1andbeyondLLminimum.8.Allfourleads.9.Dimensionr(radius)appliestobothinsidecornersoftab.10.InaccordancewithASMEY14.5M,diametersareequivalenttoφxsymbology.11.Lead1=emitter,lead2=base,lead3=collector,lead4=case(electricallyconnected).FIGURE1.Physicaldimensionsfor2N918(TO-72).TO-72SymbolDimensionsNoteSymbolDimensionsNoteInchesMillimetersInchesMillimetersMinMaxMinMaxMinMaxMinMaxBH.046.0561.171.42LS1.036.0400.911.02

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