TX半导体公司竞争力研究

上海交通大学硕士学位论文TX半导体公司竞争力研究姓名：王卫平申请学位级别：硕士专业：工商管理指导教师：黄丹20050610IIIIIICOMPETITIVENESSSTUDYOFTXSEMICONDUCTORMANUFACTURINGLTDABSTRACTSemiconductorindustryrepresentstheleadingedgeinmodernadvancetechnology.Theadvancementofsemiconductortechnologyinthelasthalfofthecenturyhasprovidedthebroadbasehardwarefoundationfortheeraofinformationtechnology.Mankindhasenteredanew“SiliconAge”.Followingtheinventionofplanarmetal-oxidesemiconductor,theproductionofIChasseenthefastestgrowthinthelast50years.BasedontheMoore’slaw,theICtechnologynodehasbeendrasticallyreducedby140timesinthelast46years,theaveragepricehasalsoreducedby107times.Withincreasingcompetitionandadvancetechnologydevelopment,thenodeofICchipisgettingsmallerandmorecompact.Thepursuitoflowcostproductionhasalsopushedthediameterofsiliconwafertogrowlarger.Astheindustrygrow,thesemiconductormanufacturingbasehasshifteditsgeographicallocations.Atthesametime,theindustryundergonedisintegrationandreorganization.Inthelate70s,theproductionshiftedfromtotalIDMmanufacturingintowaferfoundry.Thefutureofwaferfabseemspromising.Highcapitalinvestmentandadvancetechnologyare2uniqueaspectsofwaferfab.Thestate-of-the-arttechnologyresearchanddevelopmentisthekeytothecompetitivenessofthisindustry.Startedinthe80s,TSMC,UMCandTXsemiconductorshavebecametheleadersinwaferfabindustry.Asleader,challengerandfollower,theyhaverespectivelycontributedto80%ofworld’ssiliconwaferfoundrycapacitythatsupplied6%oftheglobalsemiconductordemand(2004statistics).Inanindustrythatishighlydependentonmasteringthestate-of-the-arttechnology,itsapplication,consolidation,innovation,andcloselinkwithbusinessjointventureinordertocreatelucrativeprofit,TXsemiconductorhasashortergrowthhistoryandslowergrasponthestate-of-the-arttechnology.Hence,itisnotabletocompeteeffectivelyasonewouldexpect.Withaweakeningdemand,thecompanyoperatingresultshavenotIVbeenpromisingfor3yearsinarow.ThegapbetweenTXandleadingcompetitorshasgrownwider.ThisiscompoundedwiththefastpacedevelopmentofcounterpartsinChina,TXSemiconductorisfacedwiththethreatofbecomingobsolete.UsingtheSWOTanalysis,thisthesisattemptstoanalyzetheessentialfeaturesofTXSemiconductorcompetitivenessinordertodiscoverthestrengthsandweaknessesoftheinternalorganization.Bycombiningthestudyoftheopportunitiesandthreatsposedbytheenvironment,thethesisdevelopedtheTOWSstrategicmatrix.Thisisdonetoachievetheshorttermstrategicobjectiveofturnaroundprofit,fulfillmidtermgoalofbecomingaleaderinstrategicpositioninginordertopushtheindustryintoachievingsustainableprofitobjective.TheauthorsuggeststhatforTXSemiconductortomakesignificantimpactonitsoverallstrategy,thefollowingoptionscanbeconsidered:1)Lateralconsolidation.AcquireIBM’ssemiconductorbusinessinordertoenlargeproductionscaleandIntellectualPropertyrightstoimproveitscompetitivenessandbecometheworldsecondlargestwaferfabintermsofmarketshare2)Establishitsownresearchanddevelopmentcompetency.ThisisdonebyrestructuringandintegratingthetechnologyadvantageprovidedbyIBM.Setatargetofbecomingafollowerin5years,exceedthecompetitorin10yearsandeventuallybecomingtheindustryleaderin15years.3)DeveloptheChina’smarket.ExpeditethebusinessexpansioninChinaunderthestrategicmergerprogramwithIBM.WorkoutalongtermpartnershipplanwithlocalICdesigncompanies(Fab-less)inChinainordertoexpandthemarket.SetupjointventurewithChina’sICproducerstoenjoythemarketshareandproductionresources.KEYWORDS:SemiconductorIndustryICChipWaferFoundry,Competitiveness,CompetitionStrategyMergerChina’sMarket,IIIIIMBA1507080TX8062004TXTXTXTX5TXTXMBA2Semiconductor1930195019471223BellLab(JohnBardeen1908~1991)(WalterBrattain1902~1987)(pointcontacttransistor)19545TITexasInstruments19576001958FairchildSemiconductor(PTPlanarTechnology)1958912JackKilby1923~ICIntegratedCircuit,1962(GMEGeneralMicroelectronics)(GIGeneralInstruments)MOSMetal-OxideSemiconductorIP(Waferfabrication)Chips(Wafer)16812(Die)ICchip1968(SiliconAge)1970196010198010199012000420034MBA3(Moore’slaw)1904190619471949JFET1958(IC)(TI)1959IC(Fairchild)1960IC1962(MOSIC)1965IC(TI)IC19701KDRAM19714LSI197664KDRAM19821MDRAM19854MDRAM198732198816MDRAMVLSI199164MDRAM19950.3519990.13ULSI200390:EIAJ;ERSO;ITRS:IntelGordenMoore19653540:Gilder’sLaw25670MBA4IntelWebsite:Matcalfe’sLawNNN1NNNNNNNIntel400419712,250800819722,500808019745,0008086197829,0002861982120,000Intel386™processor1985275,000Intel486™processor19891,180,000Intel®Pentium®processor19933,100,000Intel®Pentium®IIprocessor19977,500,000Intel®Pentium®IIIprocessor199924,000,000Intel®Pentium®4processor200042,000,000Intel®Itanium®processor2002220,000,000Intel®Itanium®2processor2003410,000,000IntelWebsiteMBA51002110CMOSITRS()½MOS(TechnologyNode)//50342Intel19651959461401071(M1)MBA6ITRS1)0.350.250.180.150.130.13705IC0.132)70ICICPCBICPCBICPCBICICSOCSystemOnChipSOC12IPIP3ICSOC21SOC199520002005201020152020½M1½9065322210001001045MBA7MEMSMicro-electronicandMechanicalSystem1)MEMSMEMS2000MEMS12014010002)DNA211020DNA40SOCMEMS2010CMOS225MOS20200170701-419852004204.88.8668.32000MBA832302004SIA200421302003166328ICInsights200542055212004200565200