CMOSImageSensorTrainingLecture

IntroductionofCMOSImageSensorFAB8AB/PEI/NPDJHLIN2002/10/2OutlineforthiscoursesWhatisCMOSImageSensor(CIS)WhyCMOSImagesensorThenatureofvisualworldElementofCIS-PixelSomeExampleImagesfromCustomersusingUMCCISWhatisCIS(CMOSImageSensor)?HistoryofCISApplicationWorldwidesituationHowdoesitworkHistoryofCMOSImageSensor1967FairchildWecklersuggestoperatingp-njunctioninaphotofluxintegrationmode.1968100*100photodiodearraywasreported.1970CCDwasfirstlyreported,relativefreedomfromFPN.1970’s-1980’slargeeffortwasappliedtothedevelopmentofCCD.MOSimagesensorwassporadicallyinvestigatedandcomparedunfavorablytoCCD’s.1990CMOSImageSensorwithAPSarchitecturewasreportedbyJPLandtransferthetechnologytoAT&TBellLabs,Kodak,NationalSemiconductor.2000WWCISproductsareusing0.5umabove,6”technology.2000UMCdeveloped0.35um8”CIS/CFAtechnology.2001UMCdeveloped0.25um8”CIS/CFAtechnology.2002UMCdeveloped0.18um8”CIS/CFAtechnology.PicturebookApplicationsofCMOSImageSensors-everywhereyouneedtorecordtheimpageCompactPocketDigitalCameraMobilePhonePCCameraSurveillancePDAMachineVisionAutomotiverearviewerDigitalStillCameraDigitalCamcoderToyWorldwideCISsituationUMCTSMCTowerAgilent0.5umM(6”)M(6”)M(6”)M(6”)0.35umM(8”)M(6-8”)MM(0.5um)0.25umM(8”)M(8”)DM(0.35um)0.18umD(8”)D(8”)------Howdoesitwork?-schematicblockCamera-on-a-chipProcessorHowdoesitwork?-HowlightconverttodigitalinformationM3M3u-LensPlanarlayerColorFilter(R)SiONOxideP-subPOLYN+N+WM1SABOxidePhotodiodeSensorADCScene(light)100110(digitalinformation)CDSAmpWhyCMOSImageSensor?AdvantageofCISCISvsCCDAdvantageofCISHighIntegrationCMOSImagerscanintegratedDSP,memorybyusingsameprocess.CCDsaremadeinaspecializedprocessandrequiremultipleclocksandinputs.ThisfeaturelimitsCCDstodiscretesystems.LowPowerConsumptionCMOSImagersusethesameappliedvoltageasCMOStechnology.CCDusesmultiplephaseofappliedvoltage(higher)toshiftchargeandentirearrayswitchingalltheway.CISCCDLowCostmainstreamCMOSprocesswithstablemixed-signaltechnologyAddressibilityX-Yaddressibilitylikememory,abilityof“windowing”programAchievablefor“highframerate”Advantageofthedataread-outschemeofCISCCDCISCISvs.CCD[Systemview]CISCCDRead-outrow/col.decodershift-outarchitectureIntegrationlevelhightoSOCdiscretePowerconsumption10-50mW5W-10WElectricalwindowingYesNoMax.framerate/s500~25(1024*1024)[Performance]CISCCDRatioDarkcurrent(e-/s)200~200020(X1/10)Sensitivity(V/lux*s)0.1~51~5(X1)QE(%)@550nm20~70%40~70%(X1)(QuantumEfficiency)FPN(%)0.1%~0.001%no(N/Y)(FixedPatternNoise)CrossTalk(%)5~50%5%(X1)Dynamicrange(dB)30~7070~80(X1)TheNatureofVisualWorldVisiblelightHumaneye/electricaleyeUtilizationofsiliconastheelectricaleyeImageformatVisiblelightVisiblelightspectrum400nm700nmUVIRColorreproducingPrimary(R,G,B)Complementary(C,Y,M,K)GreenBlueRedYellowCyanMagentaVisiblelightDirectsunlight100,000–130,000luxFulldaylight,indirectsunlight10,000–20,000luxOvercastday1,000luxIndooroffice200–400luxVerydarkday100luxTwilight10luxDeeptwilight1luxFullmoon0.1luxQuartermoon0.01luxMoonlessclearnightsky0.001luxMoonlessovercastnightsky0.0001luxLuxIfacandleisonefootawayfromanobject,itgivesonefoot-candleoflightilluminanceontotheobject.Thisisabout10“lux,”andisalsoaninformaldefinitionoflux.Theunitoflux(illuminancevalue)triestorelatetheactualenergyperunit-areafallingonasurfacetowhatthehumaneyeperceivesHumanEye/ElectricaleyeHumaneye:charitybestowedbyGodHumaneyeCCDCISPixels(resolution)120M1~3.3M(typ.)100k~1.3M(typ)Pixelpitch2-3um3~15um3~15umSpectrumresponse400-700nm400-1000nm400-1000nmResponsepeak550nm(Green)RedRedMin.luxsensitivity~1lux(fullmoon)0.1~3lux1~5luxDynamicrange~100dB70~80dB30~70dBDatapath5Mnerves8-12bits8-12bitsColorIdealRGBonlyRGBonlyFrameRate15Hz10kHz10kHzImagequalityPerfectVeryGoodGood~PoorHumanEye/ElectricaleyeElectricaleye:EmulationasmostBayerpattern(colorelement)Resolution-numberofpixelPixel(electricaleye)performancePixelSizeFillfactorSensitivity...….….325*288640*4801024*1024GGG3*3um…15*15umUtilizationofsiliconastheelectricaleyeResponseoflightonSiliconandcolorfilterResponseofhumaneye(peaksensitivityon~550nm)UtilizationofsiliconastheelectricaleyeEnergybandgapofSi=1.12eVEph=hc/l400nm,Eph=3.1eV700nm,Eph=1.77eV1100nm(I.R.)=1.12eV,sameasEgofSi.AbsorptioncoefficienceF(x)=F0*exp(-ax),F(x):photofluxatsiliconwithxumdepthF0:photofluximpingeintoSiabsorptioncoefficience(cm-1)x:depthofSifromsurface(um)99%ofviolet/bluelightwasabsorbedwithin0.6umdepthofSi99%ofredlightwasabsorbedwithin16.6umofSiImageFormatCOMPUTERDISPLAY-ORIENTEDFORMATS–QVGA—QuarterVideoGraphicsArray,320x240(76,800pixels)–CIF—CommonIntermediateFormat,352x288(101,400pixels)–VGA—VideoGraphicsArray,640x480(307,200pixels)–SVGA—SuperVideoGraphicsArray,aseriesofstandardsizes:800x600(480,000pixels)1024x768(786,400pixels)(orXGA,ExtendedGraphicsArray)1280x1024(1.3-megapixel)1600x1200(2-megapixel)ElementofCIS-PixelPixelsizevs.designrulePPS,APS(PD&PG)pixelAPSpixelarchitectureHowdoesAPSworkRequirementofAPSPixelSizevs.designrule1CompetitivepixelsizeX20ofdesignrulePixelsizevs.designrule2Mini