ESD培训手册(1)

120054ESDTowardsZeroDefectcausedbyESDRev.1.0Confidential2TowardsZeroDefectCausedbyESDESDPartIBasicESDKnowledge1ESDRev.1.0Confidential3TowardsZeroDefectCausedbyESDESDWhatisElectrostaticDischarge(ESD)?Asuddentransferofchargebetweenbodiesatdifferentelectrostaticpotentials.SomeexamplesofESDare:1.Lightning2.The“shock”yousometimesfeelduringwinterwhenyouwalkacrossthecarpetandtouchthedoorknob3.ThecrackingandsparkswhenyouremoveclothesfromyourdryerESDseemsharmless,butitcandamageelectroniccomponentsandassembliesRev.1.0Confidential4TowardsZeroDefectCausedbyESDESDElectrostaticDischarge(ESD)?ESD1.2.“”3.ESDRev.1.0Confidential5TowardsZeroDefectCausedbyESDESDTwomainwaysinwhichchargescanbebuiltup:1)ByContact&SeparationofMaterials(Triboelectriccharging)2)ByInductionRev.1.0Confidential6TowardsZeroDefectCausedbyESDRemainingchargeStepoverofelectronsRev.1.0Confidential7TowardsZeroDefectCausedbyESD•TriboeletricChargingmeanschargegenerationbycontactandseparationoftwoobjectsduetoadifferenceinworkfunction•Factorsinfluencingthemagnitudeandpolarityofcharging:-surfaceenergystates-roughnessofsurface-contactpressure-speedofseparation-surfaceconductivity(resistance)-relativehumidityRev.1.0Confidential8TowardsZeroDefectCausedbyESD/VEventRelativeHunidity10-20%65-95%Walkingacrossacarpet350001500Walkingacrossavinylfloor12000250Motionsofbenchemployee6000100Pickingupplasticpaperfile7000600Pickingupplasticbag200001000Workingchairfriction180001500Rev.1.0Confidential9TowardsZeroDefectCausedbyESDChargingbyInductionChargingSeparationinaneutralobjectChargeflowduringcontacttogroundRemainingchargeafterseparationRemainingchargeafterremovingtheChargedjammingobjectRev.1.0Confidential10TowardsZeroDefectCausedbyESDESD•Catastrophic-PartsarecompletelydestroyedasaresultofanESDincident.Thefailureismostoftendiscoveredandrequiredbeforetheinstrumentsisshippedouttocustomer.ESD•Latent(Degradation)-ThistypeofdamageoccurswhenanESDonlyweakensthecomponents.ItmaypassinitialtestingbutfailinthefieldORfailprematurely.ESDRev.1.0Confidential11TowardsZeroDefectCausedbyESDESDAnalysisofnon-conformingordefectivedevicesshowedthat60-75%weredamagedbyEOS(electricaloverstress)orESD.Thisrisesto90%fornewertechnologies.About70%ofthesefailureswereattributedtodamagefromIncorrectlygroundedpeople.60-75%ESDEOS90%70%ToshikazuNamaguchi,HidekaUchida.EOS/ESDSymposiumEOS-201998pp245-251Rev.1.0Confidential12TowardsZeroDefectCausedbyESDESDGateOxidedamageunderPolysiliconRev.1.0Confidential13TowardsZeroDefectCausedbyESDESDGateOxidedamageunderPolysiliconRev.1.0Confidential14TowardsZeroDefectCausedbyESDESD¡HumanBodyModel(HBM)¡MachineModel(MM)¡ChargedDeviceModelRev.1.0Confidential15TowardsZeroDefectCausedbyESDHBMHumanBodyModel(HBM)•Whenachargedindividualtouchesadevice,someofthestoredenergyistransferredordischargedeithertothedeviceorthroughthedevicetoground.•Itispossibletodevelophumanbodypotentialsthatfarexceeddamageratingsofthedevice.Rev.1.0Confidential16TowardsZeroDefectCausedbyESDHBM---Rev.1.0Confidential17TowardsZeroDefectCausedbyESDHBMHBMRev.1.0Confidential18TowardsZeroDefectCausedbyESDHBMHumanBodyModelWaveform800VRev.1.0Confidential19TowardsZeroDefectCausedbyESDMMHBMRev.1.0Confidential20TowardsZeroDefectCausedbyESDMMRev.1.0Confidential21TowardsZeroDefectCausedbyESDCDMChargedDeviceModel(CDM)CDM•Electrostaticchargesgetstoreduponareasofplasticdevices,e.g.leadframeandmetalpartsofdie•ChargesquicklydischargetoaneffectivegroundthroughalowimpedancepathandcauseESDdamage,ESD•Theelectrostaticenergystoredinthechargeddevicedependsonitscapacitancewhichisfoundtobeafunctionofitsorientationwithrespecttoground.Adeviceclosetogroundplanewillhavelargecapacitancethanthatfarfromthegroundplane.Rev.1.0Confidential22TowardsZeroDefectCausedbyESDCDMCDMCDM=+Rev.1.0Confidential23TowardsZeroDefectCausedbyESDCDMCDMRev.1.0Confidential24TowardsZeroDefectCausedbyESDCDMThelowohmicdischargeofachargeddevice(CDevice)–e.g.chargedbyslidinginaproductionlineisdescribedbytheChargedDeviceModel(CDM).TheCDMfailureisoneofthemainfailuremechanismsinautomaticproductionlines.-CDMRev.1.0Confidential25TowardsZeroDefectCausedbyESDCDMTypicalCurrentWaveformCDMCurrent/ATime/nsRev.1.0Confidential26TowardsZeroDefectCausedbyESDESDESDESDRealESDSpectrum–ESDModelsPulseWidth[s]CDMMMRiseTime[s]HBM1110−1010−910−810−710−910−810−Rev.1.0Confidential27TowardsZeroDefectCausedbyESDHBM–•MILSTD883D,method3015.7,1989•ANSIEOD/ESD–S5.1–1993(ESDAssociation)ESD•JESD22-A114-B–2000(JEDEC)FurtherStandards:EIAJ–JapanCECC–EuropeCompanyStandardsproductstandards(chipcards:ISO/IEC10373)Rev.1.0Confidential28TowardsZeroDefectCausedbyESDMM–•JESD22-A115-A–1997underrevision(JEDEC)•ANSIEOD/ESD–S5.2-1999•AutomotiveElectronicsCouncil-AEC-Q100-003-REV-ERev.1.0Confidential29TowardsZeroDefectCausedbyESDCDM–•ANSIEOS/ESD–S5.3–1993(ESDAssociation)•JESD22-C101–1996(JEDEC,onlyforfieldinducedCDM)•AutomotiveElectronicsCouncil-AEC-Q100-011-REV-A(OnlyforfieldInducedCDM)Rev.1.0Confidential30TowardsZeroDefectCausedbyESDDamagecausedbyinvisibleandundetectableeventscanbebycomparingESDdamagetomedicalcontaminatio